Transistor
2SC4787
Silicon NPN epitaxial planer type
For intermediate frequency amplification
Unit: mm
6.9鹵0.1
1.05 2.5鹵0.1
(1.45)
鹵0.05
0.8
q
q
q
0.45
鈥?.05
+0.1
(Ta=25藲C)
1
2
3
0.45
鈥?.05
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
2.5鹵0.5
2.5鹵0.5
+0.1
Ratings
45
35
4
50
600
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
1.2鹵0.1
0.65
max.
0.45
+0.1
鈥?0.05
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT1 Type Package
2.5鹵0.1
(HW type)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Common emitter reverse transfer capacitance
Power gain
Transition frequency
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
C
re
PG
f
T
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 100碌A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100碌A, I
C
= 0
V
CE
= 10V, I
C
= 10mA
I
C
= 20mA, I
B
= 2mA
V
CB
= 10V, I
E
= 鈥?mA, f = 10.7MHz
V
CB
= 10V, I
E
= 鈥?0mA, f = 58MHz
V
CB
= 10V, I
E
= 鈥?0mA, f = 100MHz
18
300
500
45
35
4
20
50
100
0.5
1.5
V
pF
dB
MHz
min
typ
max
0.1
Unit
碌A
V
V
V
14.5鹵0.5
0.85
High transition frequency f
T
.
Satisfactory linearity of forward current transfer ratio h
FE
.
Allowing supply with the radial taping.
0.65 max.
1.0
3.5鹵0.1
0.8
s
Features
0.15
0.7
4.0
1
1
2
