Transistor
2SC4715
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Unit: mm
4.0鹵0.2
3.0鹵0.2
0.7鹵0.1
s
Features
q
q
q
Satisfactory linearity of forward current transfer ratio h
FE
.
High collector to emitter voltage V
CEO
.
Small collector output capacitance C
ob
.
(Ta=25藲C)
1
2
3
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
150
150
5
100
50
300
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
1:Emitter
2:Collector
3:Base
EIAJ:SC鈥?2
New S Type Package
1.27 1.27
2.54鹵0.15
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Collector output capacitance
Transition frequency
Noise voltage
(Ta=25藲C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
C
ob
f
T
NV
Conditions
V
CB
= 100V, I
E
= 0
I
C
= 100碌A, I
B
= 0
I
E
= 10碌A, I
C
= 0
V
CE
= 5V, I
C
= 10mA
I
C
= 30mA, I
B
= 3mA
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k鈩? Function = FLAT
160
150
150
5
130
330
1
3
V
pF
MHz
mV
min
typ
max
1
Unit
碌A
V
V
*1
h
FE
Rank classification
R
130 ~ 220
S
185 ~ 330
Rank
h
FE
2.0鹵0.2
s
Absolute Maximum Ratings
marking
+0.2
0.45鈥?.1
15.6鹵0.5
1
1
2
