2SC4708
Silicon NPN Epitaxial
High Resolution Monitor Video Output
Feature
鈥?Excellent high frequency characteristics
f
T
= 1.1 GHz typ
Cob = 4.2 pF typ
鈥?High gain bandwidth product
鈥?Low collector output capacitance
鈥?High breakdown voltage
V
CEO
= 100 V
TO-126 MOD
Absolute Maximum Ratings
(Ta = 25擄C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Symbol Rating Unit
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
P
C
P
C*1
Junction temperature
Storage temperature
Tj
Tstg
100
100
3
0.2
0.5
1
5
150
V
V
V
A
A
W
W
擄C
1
2
3
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鈥?5 to 擄C
+150
1. Emitter
2. Collector
3. Base
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Note: 1. Value at T
C
= 25擄C.
Electrical Characteristics
(Ta = 25擄C)
Item
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Collector cutoff current
Emitter cutoff Current
DC current transfer ratio
Symbol
Min
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
鈥?/div>
鈥?/div>
1.0
10
200
Unit
V
V
碌A(chǔ)
碌A(chǔ)
Test condition
I
C
= 10 碌A(chǔ), I
E
= 0
I
C
= 1 mA, R
BE
=
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V
(BR)CBO
100
V
(BR)CEO
100
I
CBO
I
EBO
h
FE*1
鈥?/div>
鈥?/div>
60
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V
CB
= 80 V, I
E
= 0
V
EB
= 3 V, I
C
= 0
V
CE
= 10 V, I
C
= 10 mA
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TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 100MA I(C) | TO-18
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Shindengen Electric Mfg.Co.Ltd [POWER TRANSISTOR]
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Shindengen Electric Mfg.Co.Ltd [POWER TRANSISTOR]
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