2SC4704
Silicon NPN Epitaxial
High Frequency Amplifier
Feature
鈥?Excellent high frequency characteristics
f
T
= 300 MHz typ
鈥?High voltage and low output capacitance
V
CEO
= 200 V, Cob = 5.0 pF typ
鈥?Suitable for wide band video amplifier
鈥?Complementary pair of 2SA1810
TO-126 MOD
Absolute Maximum Ratings
(Ta = 25擄C)
1
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Symbol Rating Unit
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
P
C
P
C*1
Junction temperature
Storage temperature
Tj
Tstg
200
200
4
0.2
0.5
1.25
10
150
擄C
V
V
V
A
A
W
2
3
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鈥?5 to 擄C
+150
1. Emitter
2. Collector
3. Base
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Note: 1. Value at T
C
= 25擄C.
Electrical Characteristics
(Ta = 25擄C)
Item
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Base to emitter voltage
Symbol
Min
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
鈥?/div>
鈥?/div>
鈥?/div>
10
200
1.0
V
Unit
V
V
V
碌A(chǔ)
Test condition
I
C
= 10 碌A(chǔ), I
E
= 0
I
C
= 1 mA, R
BE
=
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V
(BR)CBO
200
V
(BR)CEO
200
V
(BR)EBO
4
I
CBO
h
FE*1
V
BE
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60
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I
E
= 10 碌A(chǔ), I
C
= 0
V
CB
= 160 V, I
E
= 0
V
CE
= 5 V, I
C
= 10 mA
V
CE
= 5 V, I
C
= 30 mA
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