鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
off
t
stg
Conditions
V
CB
=
40 V, I
E
=
0
V
EB
=
4 V, I
C
=
0
V
CE
=
1 V, I
C
=
10 mA
I
C
=
10 mA, I
B
=
1 mA
I
C
=
10 mA, I
B
=
1 mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Refer to the measurement circuit
450
2
17
17
10
6
60
0.17
Min
Typ
Max
0.1
0.1
200
0.25
1.0
Unit
碌A(chǔ)
碌A(chǔ)
錚?/div>
V
V
MHz
pF
ns
ns
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
60 to 120
R
90 to 200
No-rank
60 to 200
Product of no-rank is not classified and have no indication for rank.
0.10 max.
(0.375)
Publication date: January 2003
SJC00282BED
1
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