鈥?/div>
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
5藲
3
1藲
0.8
鹵0.1
1.6
鹵0.15
1
(0.5) (0.5)
1.0
鹵0.1
1.6
鹵0.1
2
(0.4)
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
50
50
5
50
125
125
鈭?5
to
+125
Unit
0.45
鹵0.1
V
V
V
mA
mW
擄C
擄C
1: Base
2: Emitter
3: Collector
EIAJ: SC-75
SSMini3-G1 Package
Marking Symbol: AM
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
=
10
碌A,
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
碌A,
I
C
=
0
V
CB
=
10 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
=
10 V, I
C
=
2 mA
I
C
=
10 mA, I
B
=
1 mA
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
200
0.06
250
1.5
Min
50
50
5
0.1
100
500
0.30
Typ
Max
Unit
V
V
V
碌A
碌A
錚?/div>
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
200 to 400
R
250 to 500
0 to 0.1
0.75
鹵0.15
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
(0.3)
0.2
鹵0.1
Publication date: February 2003
SJC00165BED
1
1
2
3
