Transistor
2SC4656
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1791
1.6鹵0.15
Unit: mm
s
Features
q
q
1.6鹵0.1
1.0鹵0.1
0.4
0.8鹵0.1
0.4
0.2
鈥?.05
0.15
鈥?.05
+0.1
0.5
Small collector output capacitance C
ob
.
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
0.5
1
3
2
0.45鹵0.1 0.3
0.75鹵0.15
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
50
50
5
50
125
125
鈥?5 ~ +125
Unit
V
V
V
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?5
SS鈥揗ini Type Package
Marking symbol :
AM
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
50
50
5
200
0.06
250
1.5
500
0.3
V
MHz
pF
min
typ
max
0.1
100
Unit
碌A(chǔ)
碌A(chǔ)
V
V
V
*
h
FE
Rank classification
Rank
h
FE
Marking Symbol
Q
200 ~ 400
AMQ
R
250 ~ 500
AMR
0 to 0.1
0.2鹵0.1
+0.1
1
1
2
