Transistor
2SC4655
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
1.6鹵0.15
s
Features
q
q
0.4
0.8鹵0.1
0.4
0.2
鈥?.05
0.15
鈥?.05
+0.1
Optimum for RF amplification, oscillation, mixing, and IF of FM/
AM radios.
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
1.6鹵0.1
1.0鹵0.1
0.5
1
0.5
3
2
0.45鹵0.1 0.3
0.75鹵0.15
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
5
30
125
125
鈥?5 ~ +125
Unit
V
V
V
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?5
SS鈥揗ini Type Package
Marking symbol :
K
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Transition frequency
Common emitter reverse transfer capacitance
(Ta=25藲C)
Symbol
V
CBO
V
CEO
V
EBO
h
FE*
f
T
C
re
Conditions
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
min
30
20
5
70
150
230
1.3
250
MHz
pF
typ
max
Unit
V
V
V
*
h
FE
Rank classification
Rank
h
FE
Marking Symbol
B
70 ~ 160
KB
C
110 ~ 250
KC
0 to 0.1
s
Absolute Maximum Ratings
(Ta=25藲C)
0.2鹵0.1
+0.1
1
1
2
3
