鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Forward current transfer ratio
*
Transition frequency
Reverse transfer capacitance
(Common emitter)
Power gain
Noise figure
2. *: Rank classification
Rank
h
FE
C
65 to 160
Symbol
V
CBO
V
EBO
V
BE
h
FE
f
T
C
re
G
P
NF
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
6 V, I
E
= 鈭?
mA
V
CB
=
6 V, I
E
= 鈭?
mA
V
CB
=
6 V, I
E
= 鈭?
mA, f
=
200 MHz
V
CB
=
6 V, I
E
= 鈭?
mA, f
=
10.7 MHz
V
CB
=
6 V, I
E
= 鈭?
mA, f
=
100 MHz
V
CB
=
6 V, I
E
= 鈭?
mA, f
=
100 MHz
65
450
650
0.8
24
3.3
1.0
Min
30
3
720
160
Typ
Max
Unit
V
V
mV
錚?/div>
MHz
pF
dB
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.10 max.
(0.375)
Publication date: March 2003
SJC00163AED
1
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