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2SC4617/D Datasheet

  • 2SC4617/D

  • Amplifier Transistor NPN

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  • 8頁(yè)

  • ETC

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ON Semiconductort
Product Preview
NPN Silicon General Purpose
Amplifier Transistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-416/SC鈥?0 package
which is designed for low power surface mount applications, where
board space is at a premium.
鈥?/div>
Reduces Board Space
鈥?/div>
High h
FE
, 210鈥?60 (typical)
鈥?/div>
Low V
CE(sat)
, < 0.5 V
鈥?/div>
Available in 8 mm, 7-inch/3000 Unit Tape and Reel
MAXIMUM RATINGS
(T
A
= 25擄C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current 鈥?Continuous
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
Value
50
50
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
2SC4617
NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
3
2
1
CASE 463鈥?1, STYLE 1
SOT鈥?16/SC鈥?0
COLLECTOR
3
DEVICE MARKING
2SC4617 = B9
THERMAL CHARACTERISTICS
Rating
Power Dissipation
(1)
Junction Temperature
Storage Temperature Range
Symbol
P
D
T
J
T
stg
Max
125
150
鈥?5 ~ +150
Unit
mW
擄C
擄C
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
Characteristic
Collector-Base Breakdown Voltage (I
C
= 50
碌A(chǔ)dc,
I
E
= 0)
Collector-Emitter Breakdown Voltage (I
C
= 1.0 mAdc, I
B
= 0)
Emitter-Base Breakdown Voltage (I
E
= 50
碌A(chǔ)dc,
I
E
= 0)
Collector-Base Cutoff Current (V
CB
= 30 Vdc, I
E
= 0)
Emitter-Base Cutoff Current (V
EB
= 4.0 Vdc, I
B
= 0)
Collector-Emitter Saturation Voltage
(2)
(I
C
= 60 mAdc, I
B
= 5.0 mAdc)
DC Current Gain
(2)
(V
CE
= 6.0 Vdc, I
C
= 1.0 mAdc)
Transition Frequency (V
CE
= 12 Vdc, I
C
= 2.0 mAdc, f = 30 MHz)
Output Capacitance (V
CB
= 12 Vdc, I
C
= 0 Adc, f = 1 MHz)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
鈥?/div>
h
FE
120
f
T
C
OB
鈥?/div>
鈥?/div>
鈥?/div>
180
2.0
560
鈥?/div>
鈥?/div>
MHz
pF
鈥?/div>
0.4
鈥?/div>
Min
50
50
5.0
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
鈥?/div>
鈥?/div>
鈥?/div>
0.5
0.5
Unit
Vdc
Vdc
Vdc
碌A(chǔ)
碌A(chǔ)
Vdc
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width
鈮?/div>
300
碌s,
D.C.
鈮?/div>
2%.
This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice.
Semiconductor Components Industries, LLC, 2001
1
May, 2001 鈥?Rev. 2
Publication Order Number:
2SC4617/D

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