2SC4596E
GENERAL DESCRIPTION
SILICON EPITAXIAL PLANNAR TRANSISTOR
High frequency, high power NPN transistors in a
plastic envelope, primarily for use in audio and general
purpose
QUICK REFERENCE DATA
SYMBOL
TO-220F
CONDITIONS
V
BE
= 0V
MIN
MAX
100
60
5
25
1.5
1.5
0.5
UNIT
V
V
A
A
W
V
V
s
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
V
BE
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Emitter forward voltage
Fall time
T
mb
25
I
C
= 2A; I
B
= 0.2A
I
E
= 2A
I
C
=2A,I
B1
=-I
B2
=0.2A,V
CC
=30V
-
-
-
-
-
-
LIMITING VALUES
SYMBOL
V
CESM
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0V
MIN
-
-
-
-
-
-55
-
Tmb 25
MAX
100
60
5
5
1
25
150
150
UNIT
V
V
V
A
A
W
ELECTRICAL CHARACTERISTICS
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
f
T
C
c
t
on
t
s
t
f
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 30MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
V
CB
=100V
V
EB
=5V
I
C
=1mA
I
C
=2A; I
B
= 0.2A
I
C
=1A; V
CE
= 5V
I
C
=0.5A; V
CE
= 10V
V
CB
= 10V
IC=2A,IB1=-IB2=0.2A,VCC=30V
IC=2A,IB1=-IB2=0.2A,VCC=30V
IC=2A,IB1=-IB2=0.2A,VCC=30V
MIN
MAX
0.1
0.1
1.5
200
80
0.5
1.5
0.5
60
100
120
UNIT
mA
mA
V
V
MHz
pF
us
us
us
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
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