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2SC4545 Datasheet

  • 2SC4545

  • For Medium Output Power Amplification

  • 4頁

  • PANASONIC

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Power Transistors
2SC4545
Silicon NPN epitaxial planar type
For medium output power amplification
7.5
鹵0.2
Unit: mm
4.5
鹵0.2
3.8
鹵0.2
鈥?/div>
Allowing supply with the radial taping
10.8
鹵0.2
0.65
鹵0.1
2.5
鹵0.1
0.85
鹵0.1
1.0
鹵0.1
0.8 C
90藲
鈻?/div>
Features
0.8 C
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
50
40
5
1.5
3
1.5
150
鈭?5
to
+150
Unit
V
V
V
A
A
W
擄C
擄C
16.0
鹵1.0
0.7
鹵0.1
0.7
鹵0.1
1.15
鹵0.2
1.15
鹵0.2
0.5
鹵0.1
0.8 C
1
2
3
2.05
鹵0.2
0.4
鹵0.1
2.5
鹵0.2
2.5
鹵0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
=
1 mA, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 A
I
C
=
2 A, I
B
=
0.2 A
I
C
=
2 A, I
B
=
0.2 A
V
CB
=
5 V, I
E
= 鈭?/div>
0.5 A, f
=
200 MHz
V
CB
=
20 V, I
E
=
0, f
=
1 MHz
150
35
50
Min
50
40
1
100
10
220
1
1.5
Typ
Max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
錚?/div>
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
P
50 to 100
Q
80 to 160
R
120 to 220
Publication date: January 2003
SJD00130BED
1

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