Transistor
2SC4543
Silicon NPN epitaxial planer type
For video amplifier
Unit: mm
s
Features
2.6鹵0.1
4.5鹵0.1
1.6鹵0.2
1.5鹵0.1
q
q
q
45擄
1.0
鈥?.2
+0.1
0.4鹵0.08
4.0
鈥?.20
High transition frequency f
T
.
Small collector output capacitance C
ob
.
Wide current range.
0.4max.
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*1
*2
(Ta=25藲C)
Ratings
110
100
50
3.5
300
150
1.0
150
鈥?5 ~ +150
Unit
V
V
V
V
mA
mA
W
藲C
藲C
0.5鹵0.08
1.5鹵0.1
3.0鹵0.15
3
2
1
0.4鹵0.04
Symbol
V
CBO
V
CER*1
V
CEO
V
EBO
I
CP
I
C
P
C*2
T
j
T
stg
marking
1:Base
2:Collector
3:Emitter
EIAJ:SC鈥?2
Mini Power Type Package
Marking symbol :
1F
R
EB
= 1.2k鈩?/div>
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CEO
V
CBO
V
CER
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T1
f
T2
C
ob
Conditions
V
CE
= 35V, I
B
= 0
I
C
= 100碌A(chǔ), I
E
= 0
I
C
= 500碌A(chǔ), R
BE
= 470鈩?/div>
I
C
= 1mA, I
B
= 0
I
E
= 100碌A(chǔ), I
C
= 0
V
CE
= 5V, I
C
= 100mA
*
I
C
= 150mA, I
B
= 15mA
*
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 鈥?10mA
*
, f = 200MHz
V
CB
= 30V, I
E
= 0, f = 1MHz
300
350
3
*
min
typ
max
10
110
100
50
3.5
20
0.5
2.5鹵0.1
+0.25
Unit
碌A(chǔ)
V
V
V
V
V
MHz
MHz
pF
Pulse measurement
1
1
2
