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2SC4536 Datasheet

  • 2SC4536

  • 2SC4536_NEC.pdf

  • NEC   NEC

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DATA SHEET
DATA SHEET
SILICON TRANSISTOR
2SC4536
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR
DESCRIPTION
The 2SC4536 is designed for use in middle power, low distortion low
noise figure RF amplifier. It features excellent linearity and large dynamic
range, which make it suitable for CATV, telecommunication, and other use,
it employs plastic surface mount type package (SOT-89).
4.5鹵0.1
1.6鹵0.2
1.5鹵0.1
PACKAGE DIMENSIONS
(Unit: mm)
鈥?Low Distortion
IM
2
= 57.5 dB TYP. @ V
CE
= 10 V, I
C
= 50 mA
IM
3
= 82 dB TYP.
鈥?Low Noise
NF = 1.5 dB TYP.
@ V
CE
= 10 V, I
C
= 10 mA, f = 1 GHz
High Power Dissipation.
鈥?Power Mini Mold Package Used.
@ V
CE
= 10 V, I
C
= 50 mA
0.8 MIN.
0.42
鹵0.06
E
1.5
C
B
0.42鹵0.06
0.47
鹵0.06
3.0
0.41
+0.05
鈭?.03
ABSOLUTE MAXIMUM RATINGS (T
A
= 25

C)
Maximum Voltage and Current (T
A
= 25

C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Maximum Power Dissipation
Total Power Dissipation
at 25

C Ambient Temperature P
T
*
Maximum Temperatures
Junction Temperature
Storage Temperature Range
T
j
T
stg

65
Term, Connection
E : Emitter
C : Collector (Fin)
B : Base
(SOT-89)
V
CBO
V
CEO
V
EBO
I
C
30
15
3.0
250
V
V
V
mA
2.0
150
to +150
W

C

C
* 0.7 mm

16 cm
2
double sided ceramic substrate. (Copper plating)
Document No. P10369EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
漏
4.0鹵0.25
2.5鹵0.1
FEATURES
1994

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