2SC4512
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1726)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4512
120
80
6
6
3
50(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Audio and General Purpose
(Ta=25擄C)
2SC4512
10
max
10
max
80
min
50
min
0.5
max
20
typ
110
typ
V
MHz
pF
12.0min
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
鈭梙
FE
Rank
Conditions
V
CB
=120V
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=2A
I
C
=5A, I
B
=0.2A
V
CE
=12V, I
E
=鈥?.5A
V
CB
=10V, f=1MHz
External Dimensions
MT-25(TO220)
3.0
鹵0.2
10.2
鹵0.2
4.8
鹵0.2
2.0
鹵0.1
Unit
碌
A
碌
A
16.0
鹵0.7
V
8.8
鹵0.2
a
b
酶3.75
鹵0.2
O(50 to100), P(70 to140), Y(90 to180)
2.5
B C E
4.0max
1.35
0.65
+0.2
-0.1
2.5
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(鈩?
10
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(A)
0.3
I
B2
(A)
鈥?.3
t
on
(
碌
s)
0.16
typ
t
stg
(
碌
s)
2.60
typ
t
f
(
碌
s)
0.34
typ
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I
C
鈥?V
CE
Characteristics
(Typical)
0m
A
15
0m
A
10
0m
A
80m
A
V
CE
( sat ) 鈥?I
B
Characteristics
(Typical)
C o l l ec t or - Em i t t e r Sa t u r at i on V ol t ag e V
CE (s at)
( V )
3
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
6
( V
CE
= 4 V )
6
20
C o l l e c to r C u r r e n t I
C
( A)
50 m A
C o l l ec to r C u r r e n t I
C
( A)
4
2
4
30mA
ase
Tem
p
(Cas
e Tem
)
p)
I
C
= 6A
4A
2A
0
0
0 .5
1 .0
1. 5
0
0
0
0
1
2
3
4
鈥?0藲C
25藲C
I
B
=10mA
125
藲C (
C
(Case
2
20mA
1
2
1
Ba s e - E m i tt o r V ol t ag e V
B E
( V )
Temp
)
2
Co l l ec t or - Emi t t er Vo l ta ge V
C E
(V)
Ba s e Cu r r en t I
B
( A)
(V
C E
=4 V)
300
DC Cu r r e nt Ga i n h
FE
DC C ur re nt Ga i n h
FE
200
12 5藲 C
( V
C E
= 4 V)
Transient Thermal Resistance
胃
j -a
( 藲 C / W )
h
F E
鈥?I
C
Characteristics
(Typical)
h
F E
鈥?I
C
Temperature Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
5
100
2 5藲 C
100
Typ
鈥? 0 藲 C
50
1
50
0 .5
0 .4
1
10
10 0
Time t(ms)
1000 2000
30
0.02
0. 1
0 .5
1
56
20
0 .0 2
0.1
0.5
1
56
C ol l e ct o r Cu rre nt I
C
(A)
C o ll e ct o r C u r r e nt I
C
( A)
f
T
鈥?I
E
Characteristics
(Typical)
(V
C E
= 1 2 V )
40
20
10
Cu t-o ff F re q u e n c y f
T
( M H
Z
)
5
30
Co llec t o r C u r r e n t I
C
( A )
Safe Operating Area
(Single Pulse)
50
10
Pc 鈥?Ta Derating
s
M ax im u m P o w e r D i s s i p a t i o n P
C
( W )
100ms
m
40
W
ith
DC
In
Typ
fin
30
ite
he
20
1
0.5
at
si
nk
20
10
Without Heatsink
Natural Cooling
0.1
10
Without Heatsink
0
25
50
75
10 0
125
150
0
鈥?.02
鈥? . 1
鈥?
鈥?
0 .0 5
3
5
10
50
1 00
2
0
Em i t t er Cu rre nt I
E
(A )
Co ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
A m b i e n t T em p er at u r e T a ( 藲 C )
111
SANKEN
1
