Transistor
2SC4502
Silicon NPN epitaxial planer type
For mtermediate frequency amplification
Unit: mm
6.9鹵0.1
0.15
1.05 2.5鹵0.1
鹵0.05
(1.45)
0.8
0.5
4.5鹵0.1
s
Features
q
q
q
0.7
4.0
0.65 max.
1.0 1.0
High transition frequency f
T
.
Large collector power dissipation P
C
.
Allowing supply with the radial taping.
0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
(Ta=25藲C)
Ratings
50
45
4
50
1
150
鈥?5 ~ +150
Unit
0.45
鈥?.05
0.45
鈥?.05
+0.1
+0.1
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C*
T
j
T
stg
2.5鹵0.5
1
2
2.5鹵0.5
3
V
V
mA
W
藲C
藲C
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
1.2鹵0.1
0.65
max.
0.45
+0.1
鈥?0.05
2.5鹵0.1
V
(HW type)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Common emitter reverse transfer capacitance
Power gain
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
re
PG
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 100碌A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100碌A, I
C
= 0
V
CE
= 10V, I
C
= 10碌A
I
C
= 20mA, I
B
= 2mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 鈥?mA, f = 10.7MHz
V
CB
= 10V, I
E
= 鈥?0mA, f = 58MHz
22
300
1.5
30
50
45
4
20
100
0.4
V
MHz
pF
dB
min
typ
max
100
Unit
nA
V
V
V
14.5鹵0.5
1
1
2
