2SC4418
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4418
500
400
10
5(
Pulse
10)
2
30(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Switching Regulator and General Purpose
External Dimensions
FM20(TO220F)
4.0
鹵0.2
10.1
鹵0.2
4.2
鹵0.2
2.8 c0.5
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=1.5A
I
C
=1.5A, I
B
=0.3A
I
C
=1.5A, I
B
=0.3A
V
CE
=12V, I
E
=鈥?.3A
V
CB
=10V, f=1MHz
(Ta=25擄C)
2SC4418
100
max
100
max
400
min
10 to 30
0.5
max
1.3
max
20
typ
30
typ
V
V
MHz
pF
Unit
碌
A
V
16.9
鹵0.3
8.4
鹵0.2
碌
A
13.0min
1.35
鹵0.15
1.35
鹵0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
鹵0.2
2.4
鹵0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(鈩?
133
I
C
(A)
1.5
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(A)
0.15
I
B2
(A)
鈥?.3
t
on
(
碌
s)
1
max
t
stg
(
碌
s)
2.5
max
t
f
(
碌
s)
0.5
max
2.54
3.9
B C E
I
C
鈥?V
C E
Characteristics
(Typical)
5
A
1.8
V
CE
(sat),V
BE
(sat) 鈥?I
C
Temperature Characteristics
(Typical)
C ol l e c t o r - E m i tt e r S at u r a t i o n V o lt a g e V
C E(s a t)
(V )
Ba s e - E m i t te r S at u r a t i o n Vo lt a g e V
B E(s at)
( V )
( I
C
/I
B
= 5 )
V
C E
( sa t )
2
鈥?5藲C (Case Temp)
125藲C (Case Temp)
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
5
( V
CE
= 4 V )
1.4 A
1A
4
C o l l e c t o r Cu r r e n t I
C
( A )
60 0m A
3
400 mA
C o l l ec t or C u r r e n t I
C
( A )
25藲C (Case Temp)
4
3
200 mA
2
1
100 mA
I
B
=50m A
0
0
1
2
3
4
0
0.01
0.05
0.1
0 .5
1
5
0
0
鈥?5
藲C
12
25藲
C(
1
1
5藲C
鈥?5藲C (Case Temp)
Temp)
25藲C (Case
)
se Temp
a
125藲C (C
2
eT
em
Tem
p)
(Ca
se T
p)
emp
)
V
B E
( sa t )
as
(C
Ca
se
鹵0.2
0.8
鹵0.2
a
b
酶3.3
鹵0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
1.0
B a s e - E m i tt o r Vo l ta g e V
BE
( V)
1.6
Col l e ct o r- Em i t ter Vo l t ag e V
C E
(V )
C ol l ec t or C ur r en t I
C
( A)
h
FE
鈥?I
C
Characteristics
(Typical)
(V
C E
= 4 V )
100
Sw i t c hi n g T i m e
t
on鈥?/div>
t
st g鈥?/div>
t
f
(
碌
s )
D C C u r r e n t G ai n h
FE
50
8
5
t
o n
鈥
s t g
鈥
f
鈥?I
C
Characteristics
(Typical)
Transient Thermal Resistance
胃
j-a
(藲 C/ W )
5
胃
j - a
鈥?t Characteristics
Typ
V
CC
2 0 0 V
I
C
: I
B1
:I
B 2
= 1 0: 1 :鈥?2
1
0 .5
t
f
t
on
0 .1
0.1
0 .5
t
s tg
10
5
1
2
0.01
0. 0 5
0.1
0. 5
1
5
1
3
0. 5
0. 4
1
10
Time t(ms)
100
10 0 0
C ol l e ct or C ur ren t I
C
(A )
Co l le c to r Cu r r e n t I
C
( A)
Safe Operating Area
(Single Pulse)
20
10
5
Co lle ct o r C u r r e n t I
C
( A )
DC
10
1m
s
10
Reverse Bias Safe Operating Area
20
30
Pc 鈥?Ta Derating
s
5
Co llec t o r C u r r e n t I
C
( A)
m
M a xim u m P o we r D i s s i p a t i o n P
C
( W )
0
碌
50
碌
s
10
W
s
ith
20
In
fin
1
0.5
1
0 .5
ite
he
at
si
nk
0.1
0. 05
Without Heatsink
Natural Cooling
0 .1
0 .0 5
Without Heatsink
Natural Cooling
L=3mH
I
B2
=鈥?.5A
Duty:less than 1%
10
W i t h o u t H e a ts i n k
2
0. 01
2
5
10
50
1 00
500
0 .0 1
5
10
50
1 00
5 00
0
0
25
50
75
100
12 5
1 50
C ol l ec t or - Emi t te r V ol ta ge V
C E
(V)
C ol l ec t or - Em i tt e r Vol t ag e V
C E
( V)
Am bi e nt T e m p e r a t u r e T a ( 藲 C )
103
SANKEN
1
