2SC4304
Silicon NPN Triple Diffused Planar Transistor
(High Voltage High Speed Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4304
900
800
7
3(
Pulse
6)
1.5
35(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Switching Regulator and General Purpose
(Ta=25擄C)
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=0.7A
I
C
=0.7A, I
B
=0.14A
I
C
=0.7A, I
B
=0.14A
V
CE
=12V, I
E
=鈥?.3A
V
CB
=10V, f=1MHz
100
max
100
max
800
min
10 to 30
0.5
max
1.2
max
15
typ
50
typ
External Dimensions
FM20(TO220F)
4.0
鹵0.2
10.1
鹵0.2
4.2
鹵0.2
2.8 c0.5
2SC4304
Unit
碌
A
V
V
V
MHz
pF
13.0min
16.9
鹵0.3
8.4
鹵0.2
碌
A
1.35
鹵0.15
1.35
鹵0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
鹵0.2
2.4
鹵0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(鈩?
357
I
C
(A)
0.7
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(A)
0.1
I
B2
(A)
鈥?.35
t
on
(
碌
s)
0.7
max
t
stg
(
碌
s)
4.0
max
t
f
(
碌
s)
0.7
max
2.54
3.9
B C E
I
C
鈥?V
CE
Characteristics
(Typical)
3
V
CE
(sat),V
BE
(sat) 鈥?I
C
Temperature Characteristics
(Typical)
C ol l e c t o r - E m i tt e r S at u r a t i o n V o lt a g e V
C E(s a t)
(V )
Ba s e - E m i t te r S at u r a t i o n Vo lt a g e V
B E(s at)
( V )
( I
C
/ I
B
= 5)
I
C
鈥?V
BE
Temperature Characteristics
(Typical)
3
( V
C E
= 4V )
700mA
50 0m A
V
C E
( s a t)
2
25藲C (Case Temp)
125藲C (Case Temp)
C o l l e c t o r Cu r r e n t I
C
( A )
300 mA
2
200 mA
C o l l ec t or C u r r e n t I
C
( A )
鈥?5藲C (Case Temp)
2
鹵0.2
0.8
鹵0.2
a
b
酶3.3
鹵0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
e Te
mp)
p)
Tem
Case
100mA
1
V
BE
( s at )
)
鈥?5藲C (Case Temp
Temp)
25藲C (Case
125藲C (Case
Temp)
Cas
125
藲C (
0
0
1
2
3
4
0
0.01
0.05
0. 1
0. 5
1
3
0
0
0.2
0.4
0.6
0 .8
鈥?5藲C
(
I
B
=50m A
25藲C
(
1
1
Case
Temp
)
1.0
1 .2
C E
(V )
Co l le c to r Cu r r e n t I
C
( A)
B a s e - Em i t t o r Vo l t a g e V
BE
( V)
(V
CE
=4 V)
50
D C C ur re n t Gai n h
F E
Sw i t c hi n g T i m e
t
on鈥?/div>
t
st g鈥?/div>
t
f
(
碌
s )
12 5藲 C
2 5藲 C
鈥? 5藲 C
10
7
5
V
CC
2 5 0 V
I
C
: I
B 1
:鈥?I
B 2
= 1 0: 1 .5 :5
1
t
f
0.5
t
on
0.1
0.1
t
s tg
Transient Thermal Resistance
胃
j- a
( 藲C /W )
h
FE
鈥?I
C
Characteristics
(Typical)
t
o n
鈥
s t g
鈥?t
f
鈥?I
C
Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
4
1
5
0. 5
0. 3
2
0.01
0. 0 5
0. 1
0. 5
1
3
0. 5
C ol l ec t or C ur r e nt I
C
( A)
1
2
1
10
Time t(ms)
100
1 0 00
C ol l ec t or C urr en t I
C
( A)
Safe Operating Area
(Single Pulse)
10
5
50
碌
s
10
0
碌
Reverse Bias Safe Operating Area
10
5
Ma x im um P ow e r D i s s i p a ti o n P
C
( W )
30
35
Pc 鈥?Ta Derating
W
ith
Co ll ec t o r Cu r r e n t I
C
( A)
1
0.5
Co llec t o r C u r r e n t I
C
( A )
1
0.5
s
1m
DC
( Tc
=2
5
C
)
In
s
fin
ite
10
ms
20
he
at
si
nk
0.1
0.05
Without Heatsink
Natural Cooling
0.01
0 .1
0.05
Without Heatsink
Natural Cooling
L=3mH
I
B2
=鈥?.0A
Duty:less than 1%
10
0.01
5
10
50
10 0
50 0
1000
0.005
50
1 00
50 0
1 00 0
2
0
W i t h o ut H e a ts i n k
0
25
50
75
100
1 25
1 50
0.005
2
Co ll e ct o r -Em i t t er V ol tag e V
C E
(V )
C o ll e ct o r - Em i t t er Vo lt a ge V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( 藲 C )
100
SANKEN
1
