2SC4300
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4300
900
800
7
5(Pulse10)
2.5
75(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Switching Regulator and General Purpose
(Ta=25擄C)
2SC4300
100
max
100
max
800
min
10 to 30
0.5
max
1.2
max
6
typ
75
typ
V
V
16.2
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=2A
I
C
=2A, I
B
=0.4A
I
C
=2A, I
B
=0.4A
V
CE
=12V, I
E
=鈥?.5A
V
CB
=10V, f=1MHz
External Dimensions
FM100(TO3PF)
0.8
鹵0.2
15.6
鹵0.2
5.5
鹵0.2
3.45
鹵0.2
5.5
酶3.3
鹵0.2
1.6
Unit
碌
A
23.0
鹵0.3
V
9.5
鹵0.2
碌
A
a
b
MHz
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
鹵0.1
5.45
鹵0.1
4.4
1.5
0.65
+0.2
-0.1
3.3
0.8
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(鈩?
125
I
C
(A)
2
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(A)
0.3
I
B2
(A)
鈥?
t
on
(
碌
s)
1
max
t
stg
(
碌
s)
5
max
t
f
(
碌
s)
1
max
3.35
1.5
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
鈥?V
CE
Characteristics
(Typical)
5
V
CE
(sat),V
BE
(sat) 鈥?I
C
Temperature Characteristics
(Typical)
C o l l e c t o r - Em i t t e r Sa t u r a ti o n V ol t ag e V
C E(s at)
(V )
B as e - Em i t t e r Sa t u r at i on V ol t ag e V
B E(s at)
( V)
( I
C
/ I
B
= 5)
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
5
( V
CE
= 4V )
700mA
60 0m A
500 mA
2
C o l l e c to r C u r r e n t I
C
( A)
300m A
3
200mA
C ol l e c t o r C ur r en t I
C
( A)
4
400 mA
4
3
Tem
p
)
emp)
I
B
=100mA
Te
m
p)
25藲
C
鈥?5藲C
1
1
V
C E
( s at )
0
0.03 0.05
0. 1
0 .5
125藲C
(
Ca
se
0
0
1
2
3
4
1
5
10
0
0
0.2
0.4
0.6
0. 8
鈥?5藲C (C
鈥?5藲C (Case Temp)
25藲C (Case Temp)
e Temp)
125藲C (Cas
125藲
C (C
2
1
V
B E
( s a t)
2
25藲C
(Case
T
ase Tem
ase
p)
1.0
Co l l ec t or - Emi t te r V ol ta ge V
C E
( V)
C ol l ec t or C ur r e nt I
C
( A)
B as e- Em i t t or V o l t a g e V
BE
( V )
(V
C E
= 4 V )
50
S w i t c hi n g T i m e
t
on鈥?/div>
t
st g鈥?/div>
t
f
(
碌
s )
D C C ur re nt Ga i n h
FE
10
t
s tg
V
CC
250V
I
C
:I
B1
:鈥揑
B2
=2:0.3:1 Const.
Transient Thermal Resistance
胃
j -a
( 藲 C / W )
h
F E
鈥?I
C
Characteristics
(Typical)
t
o n
鈥
s t g
鈥
f
鈥?I
C
Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
2
125藲C
25藲C
5
1
鈥?5 藲C
0.5
1
0.5
t
on
0.2
0 .1
0. 5
t
f
10
5
0.02
0.05
0.1
0.5
1
5
1
5
0.1
1
10
Time t(ms)
10 0
3.0
1 .2
1000
C o ll e ct o r Cu rre nt I
C
(A)
C o ll e ct o r Cu r r e nt I
C
( A)
Safe Operating Area
(Single Pulse)
20
10
5
Co llec t o r C u r r e n t I
C
( A )
10
10
碌
s
Reverse Bias Safe Operating Area
20
10
80
Pc 鈥?Ta Derating
1m
0
碌
s
s
5
Co llec to r C u r r e n t I
C
( A )
Ma x im um P ow e r D i s s i p a t i on P
C
( W )
60
W
ith
In
1
0.5
fin
1
0.5
ite
he
40
at
si
nk
0.1
0.05
Without Heatsink
Natural Cooling
0.1
0.05
Without Heatsink
Natural Cooling
L=3mH
I
B2
=鈥?.0A
Duty:less than 1%
20
0.01
10
50
100
50 0
1000
0.01
50
1 00
50 0
10 00
3. 5
0
W i t ho u t H ea t s i nk
0
50
100
15 0
C ol l e ct or - Em it t er Vo l t ag e V
C E
(V )
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( 藲 C )
98
SANKEN
1
