2SC4299
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4299
900
800
7
3(
Pulse
6)
1.5
70(Tc=25擄C)
150
鈥?5 to +150
(Ta=25擄C)
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Switching Regulator and General Purpose
(Ta=25擄C)
2SC4299
100
max
100
max
800
min
10 to 30
0.5
max
1.2
max
6
typ
50
typ
V
V
16.2
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=1A
I
C
=1A, I
B
=0.2A
I
C
=1A, I
B
=0.2A
V
CE
=12V, I
E
=鈥?.3A
V
CB
=10V, f=1MHz
External Dimensions
FM100(TO3PF)
0.8
鹵0.2
15.6
鹵0.2
5.5
鹵0.2
3.45
鹵0.2
5.5
酶3.3
鹵0.2
1.6
Unit
碌
A
23.0
鹵0.3
V
9.5
鹵0.2
碌
A
a
b
MHz
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
鹵0.1
1.5
4.4
5.45
鹵0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(鈩?
250
I
C
(A)
1
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(A)
0.15
I
B2
(A)
鈥?.5
t
on
(
碌
s)
1
max
t
stg
(
碌
s)
5
max
t
f
(
碌
s)
1
max
3.35
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
鈥?V
CE
Characteristics
(Typical)
3
V
CE
(sat),V
BE
(sat) 鈥?I
C
Temperature Characteristics
(Typical)
C o l l ec to r - Em i t t er S a t ur a t i o n Vo l ta g e V
CE (sa t)
(V )
B as e - Em i t t e r Sa t u r at i on V ol t ag e V
BE (sa t)
( V )
( I
C
/I
B
= 5 )
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
3
( V
C E
=4 V )
500mA
400mA
300m A
1
mp
鈥?5藲C (Case Te
25藲C (Cas
e Temp)
Temp)
V
B E
( s at )
)
C o l l e c t o r Cu r r e n t I
C
( A )
200mA
2
C o l l ec t or C u r r e n t I
C
( A )
2
Tem
p
)
2 5
Cas
eT
藲C
e
m
p)
C (C
ase
125藲C
鈥?5
藲C
(
V
C E
( sa t )
0
0.02
0 .0 5
0.1
0 .5
1
12
5藲C
0
0
1
2
3
4
3
0
0
0. 2
0.4
0.6
0 .8
鈥?5藲C (C
1
125藲
I
B
=50mA
1
25藲C (C
ase Tem
ase Te
(Case
p)
100mA
mp)
1. 0
Co l l ect o r - Em i t te r V ol ta ge V
C E
(V)
C ol l ec t or C ur r en t I
C
( A)
B a s e - Em i t t o r Vo l t a g e V
BE
( V )
(V
C E
= 4 V )
50
12 5藲 C
D C C u r r e n t G ai n h
FE
2 5藲 C
Sw i t c hi n g T i m e
t
on鈥?/div>
t
st g鈥?/div>
t
f
(
碌
s )
8
5
t
s tg
V
CC
250V
I
C
:I
B1
:鈥揑
B2
=2:0.3:1 Const.
1
0.5
t
on
0.2
0.1
0. 5
1
3
Transient Thermal Resistance
胃
j- a
( 藲 C / W )
h
FE
鈥?I
C
Characteristics
(Typical)
t
o n
鈥
s tg
鈥?t
f
鈥?I
C
Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
3
鈥? 5藲 C
1
t
f
10
0.5
5
0.01
0 . 05
0. 1
0. 5
1
3
0.3
1
10
Time t(ms)
100
3.0
1.2
10 0 0
C ol l ec t or Cu rren t I
C
(A )
C o ll e ct o r Cu r r e nt I
C
( A)
Safe Operating Area
(Single Pulse)
10
10
Reverse Bias Safe Operating Area
70
Pc 鈥?Ta Derating
10
0
碌
s
Ma x im um P ow e r D i s s i p a ti o n P
C
( W )
5
5
60
W
Co lle ct o r C u r r e n t I
C
( A )
Co llec t o r C u r r e n t I
C
( A )
50
ith
In
fin
ite
40
he
1
1
Without Heatsink
Natural Cooling
L=3mH
I
B2
=鈥?.0A
Duty:less than 1%
at
si
nk
30
0.5
Without Heatsink
Natural Cooling
0 .5
20
10
W i t ho u t He a t s i nk
3.5
0
0.1
50
10 0
50 0
1000
0 .1
50
1 00
50 0
1 00 0
0
25
50
75
1 00
12 5
150
Co l l ect o r - Em i t t er Vo l tag e V
C E
(V)
Co l le c to r - E m it t er Vo l ta ge V
C E
( V )
A m bi en t T e m p e r a t ur e T a ( 藲 C )
97
SANKEN
1
