Ordering number:EN2924A
NPN Triple Diffused Planar Silicon Transistor
2SC4256
1200V/10mA High-Voltage Amplifier,
High-Voltage Switching Applications
Features
路 High breakdown voltage.
路 Small C
ob
.
路 Wide ASO.
路 High reliability (Adoption of HVP process).
Package Dimensions
unit:mm
2010C
[2SC4256]
10.2
3.6
5.1
2.7
6.3
4.5
1.3
18.0
5.6
1.2
14.0
15.1
0.8
0.4
1 : Base
2 : Collector
3 : Emitter
JEDEC : TO-220AB
EIAJ
: SC-46
1
2
3
2.7
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
2.55
2.55
Ratings
1500
1200
5
10
30
1.75
150
鈥?5 to +150
Unit
V
V
V
mA
mA
W
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
VCB=1200V, IE=0
VEB=4V, IC=0
VCE=5V, IC=0.5mA
VCE=10V, IC=0.5mA
IC=1mA, IB=0.2mA
IC=1mA, IB=0.2mA
1500
1200
5
1.6
10
6
5
2
Conditions
Ratings
min
typ
max
1
1
60
MHz
V
V
V
V
V
pF
Unit
碌A(chǔ)
碌A(chǔ)
V(BR)CBO IC=100碌A(chǔ), IE=0
V(BR)CEO IC=1mA, RBE=鈭?/div>
V(BR)EBO IE=100碌A(chǔ), IC=0
Cob
VCB=100V, f=1MHz
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft鈥檚
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1598HA (KT)/D148MO, TS No.2924鈥?/3
1
