DATA SHEET
SILICON TRANSISTOR
2SC4225
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
DESCRIPTION
The 2SC4225 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF through UHF band.
It has large dynamic range and good current characteristics.
PACKAGE DIMENSIONS
in millimeters
2.1 鹵 0.1
1.25 鹵 0.1
FEATURES
2.0 鹵 0.2
0.3
+0.1
鈥?
鈥?Low Noise and High Gain
NF = 1.5 dB TYP.
錚疭
21e
錚?/div>
2
= 10 dB TYP.
at V
CE
= 10 V, I
C
= 5 mA, f = 1 GHz
at V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
(reference value)
0.65 0.65
2
0.3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CB0
V
CE0
V
EB0
I
C
P
T
T
j
T
stg
25
12
3.0
70
160
150
鈥?5 to +150
V
V
V
mA
mW
藲
C
藲
C
0.9 鹵 0.1
Marking
ELECTRICAL CHARACTERISTICS (T
A
= 25 藲C)
Characteristics
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Insertion Power Gain
Noise Figure
Symbol
I
CB0
I
EB0
h
FE
f
T
C
ob
錚疭
21e
錚?/div>
2
NF
7.5
40
80
4
1.2
9.0
1.5
3.0
1.8
MIN.
TYP.
MAX.
1.0
1.0
200
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Unit
Test Conditions
V
CB
= 10 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 3 V, I
C
= 20 mA, pulsed
碌
A
碌
A
GHz
pF
dB
dB
V
CE
= 3 V, I
C
= 20 mA, f = 1 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
V
CE
= 3 V, I
C
= 20 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 1GHz
h
FE
Classifications
Rank
Marking
h
FE
R2
R2
40 to 120
R3
R3
100 to 200
Document No. P11192EJ2V0DS00 (2nd edition)
Date Published February 1996 P
Printed in Japan
0 to 0.1
漏
0.15
+0.1
鈥?.05
0.3
+0.1
鈥?
1
3
1996
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