Transistor
2SC4208, 2SC4208A
Silicon NPN epitaxial planer type
For low-frequency output amplification and driver amplification
Complementary to 2SA1619 and 2SA1619A
5.0鹵0.2
4.0鹵0.2
Unit: mm
q
q
q
Low collector to emitter saturation voltage V
CE(sat)
.
Output of 1W is obtained with a complementary pair with
2SA1619 and 2SA1619A.
Allowing supply with the radial taping.
(Ta=25藲C)
Ratings
30
60
25
50
7
1
500
1
150
鈥?5 ~ +150
Unit
V
1.27
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SC4208
2SC4208A
2SC4208
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
V
CBO
0.45
鈥?.1
1.27
+0.15
13.5鹵0.5
0.7鹵0.1
0.7鹵0.2
8.0鹵0.2
s
Features
0.45
鈥?.1
+0.15
emitter voltage 2SC4208A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
A
mA
W
藲C
藲C
1 2 3
2.54鹵0.15
2.3鹵0.2
1:Emitter
2:Collector
3:Base
TO鈥?2NL Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SC4208
2SC4208A
2SC4208
2SC4208A
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10碌A, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10碌A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 10V, I
B
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
I
C
= 300mA, I
B
= 30mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
30
60
25
50
7
85
40
0.35
1.1
150
6
*2
min
typ
max
0.1
Unit
碌A
V
V
V
340
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
0.6
1.5
V
V
MHz
15
pF
Pulse measurement
FE1
Rank classification
Q
85 ~ 170
R
120 ~ 240
S
170 ~ 340
Rank
h
FE1
1
1
2
3
4
