DATA SHEET
SILICON TRANSISTOR
2SC4183
RF AMPLIFIER FOR UHF TV TUNER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
DESCRIPTION
The 2SC4183 is specifically designed for UHF RF amplifier applica-
tions. The 2SC4183 features high gain, low noise, and excellent forward
AGC characteristics in tiny plastic super mini mold package makes it
suitable for use in small type equipments such as Hybrid Integrated
Circuit and other applications.
2.0 鹵 0.2
0.3
+0.1
鈥?
PACKAGE DIMENSIONS
in millimeters
2.1 鹵 0.1
1.25 鹵 0.1
FEATURES
鈥?Low NF and high G
pb
NF = 3.0 dB Typ.
G
pb
= 10 dB Typ. (f = 900 MHz)
鈥?Foward AGC characteristics.
0.65 0.65
2
0.3
+0.1
鈥?
0.15
+0.1
鈥?.05
Test Conditions
1
3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CB0
V
CE0
V
EB0
I
C
P
T
T
j
T
stg
30
25
3.0
20
160
150
鈥?5 to +150
V
V
V
mA
mW
藲C
藲C
0.9 鹵 0.1
0.3
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (T
A
= 25 藲C)
Characteristics
Collector Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Noise Figure
Power Gain
Collector Saturation Voltage
Symbol
I
CB0
h
FE
f
T
C
ob
NF
G
pb
V
CE(sat)
6
60
700
100
1 000
0.55
3.0
10
0.5
1.0
4.8
MIN.
TYP.
MAX.
0.1
240
MHz
pF
dB
dB
V
Unit
碌
A
V
CB
= 10 V, I
E
= 0
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 2 mA
V
CB
= 5 V, I
E
= 0
V
CE
= 5 V, I
C
= 2 mA, f = 900 MHz
V
CE
= 5 V, I
C
= 2 mA, f = 900 MHz
I
C
= 10 mA, I
B
= 1 mA
h
FE
Classification
Rank
Marking
h
FE
U16
U16
60 to 120
U17
U17
90 to 180
U18
U18
120 to 240
Document No. P11188EJ4V0DS00 (4th edition)
(Previous No. TC-1432A)
Date Published February 1996 P
Printed in Japan
0 to 0.1
漏
1984