Power Transistors
2SC4152
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
0.7鹵0.1
Unit: mm
10.0鹵0.2
5.5鹵0.2
2.7鹵0.2
4.2鹵0.2
蠁3.1鹵0.1
1.4鹵0.1
1.3鹵0.2
0.5
+0.2
鈥?.1
0.8鹵0.1
2.54鹵0.25
5.08鹵0.5
1
2
3
4.2鹵0.2
s
Features
q
q
q
q
q
High-speed switching
High collector to base voltage V
CBO
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio h
FE
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25藲C)
Ratings
1400
1400
700
5
1.0
0.3
20
2
150
鈥?5 to +150
Unit
V
V
V
V
A
A
W
藲C
藲C
16.7鹵0.3
14.0鹵0.5
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CER
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Solder Dip
s
Absolute Maximum Ratings
4.0
7.5鹵0.2
1:Base
2:Collector
3:Emitter
TO鈥?20 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CER
V
CEO
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
V
CB
= 1100V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 1mA, R
BE
= 100鈩?/div>
I
C
= 1mA, I
B
= 0
I
E
= 1mA, I
C
= 0
V
CE
= 5V, I
C
= 30mA
I
C
= 60mA, I
B
= 6mA
I
C
= 60mA, I
B
= 6mA
V
CE
= 10V, I
C
= 30mA, f = 1MHz
V
CB
= 100V, I
E
= 0, f = 1MHz
I
C
= 0.15A, I
B1
= 15mA, I
B2
= 鈥?0mA,
V
CC
= 250V
12
6
2
3
1
1400
700
5
10
40
2
2
V
V
MHz
pF
碌s
碌s
碌s
min
typ
max
10
10
Unit
碌A(chǔ)
碌A(chǔ)
V
V
V
1
1
2
3
