2SC4130
Silicon NPN Epitaxial Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4130
500
400
10
7(
Pulse
14)
2
30(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Switching Regulator and General Purpose
(Ta=25擄C)
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=0.6A
I
C
=3A, I
B
=0.6A
V
CE
=12V, I
E
=鈥?.5A
V
CB
=10V, f=1MHz
External Dimensions
FM20(TO220F)
4.0
鹵0.2
10.1
鹵0.2
4.2
鹵0.2
2.8 c0.5
2SC4130
100
max
100
max
400
min
10 to 30
0.5
max
1.3
max
15
typ
50
typ
Unit
碌
A
V
V
V
MHz
pF
13.0min
16.9
鹵0.3
8.4
鹵0.2
碌
A
1.35
鹵0.15
1.35
鹵0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
鹵0.2
2.4
鹵0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(鈩?
67
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(A)
0.3
I
B2
(A)
鈥?.6
t
on
(
碌
s)
1
max
t
stg
(
碌
s)
2.2
max
t
f
(
碌
s)
0.5
max
2.54
3.9
B C E
I
C
鈥?V
CE
Characteristics
(Typical)
7
V
CE
(sat),V
BE
(sat) 鈥?I
C
Temperature Characteristics
(Typical)
( I
C
/ I
B
= 5)
Co l l e c t o r - Em i t t e r Sa t u r a t i o n V o l t a ge V
CE(s at)
( V )
B a s e - Em i t t e r Sa t u r a ti o n V ol t ag e V
B E(sa t)
(V )
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
7
( V
CE
= 4V )
I
B
=1
6
40
0m
1000mA
A
600mA
400m A
2
C ol l e c t o r C ur r e nt I
C
( A )
6
C ol l e c t o r C ur r en t I
C
( A)
4
4
p)
emp
)
鈥?5藲
1
em
50mA
5藲C
p)
藲C
V
C E
( s a t)
0
0.02
0.05
0. 1
0. 5
(C
125藲C
as
e
T
鈥?
5藲
C
0
0
1
2
3
4
1
5 7
0
0
0. 2
0.4
0.6
25藲
25
12
C (C
0 .8
C (C
2
2
(Ca
ase
100 mA
鈥?5藲C (Case Temp)
mp)
25藲C (Case Te
emp)
eT
125藲C (Cas
se
T
ase
T
Tem
V
B E
( sa t )
em
p)
20 0m A
鹵0.2
0.8
鹵0.2
a
b
酶3.3
鹵0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
1. 0
1.2
Col le ct o r -Em i t t er V ol tag e V
C E
(V)
C o ll e ct o r Cu r r e nt I
C
( A)
B a s e - Em i t t o r Vo l t a g e V
B E
( V )
(V
C E
= 4 V )
50
DC C ur r e nt Ga i n h
FE
Sw i t c hi n g T i m e
t
on鈥?/div>
t
stg鈥?/div>
t
f
(
碌
s )
1 25 藲 C
25 藲 C
鈥?55 藲C
5
Transient Thermal Resistance
胃
j -a
( 藲C /W )
h
FE
鈥?I
C
Characteristics
(Typical)
t
o n
鈥
s t g
鈥
f
鈥?I
C
Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
4
V
CC
2 0 0 V
I
C
:I
B 1
: 鈥?I
B2
= 1 0: 1 :2
1
0 .5
t
on
t
f
0 .1
0.2
0.5
1
t
s tg
10
1
5
0 .5
0 .3
2
0.02
0.05
0. 1
0 .5
1
5
7
5
7
1
10
Time t(ms)
10 0
1000
Co l l ect o r Curr en t I
C
( A)
Co l le c to r Cu r r en t I
C
( A)
Safe Operating Area
(Single Pulse)
20
10
5
Col lec tor Cu rr e n t I
C
(A )
DC
10
1m
s
10
0
碌
Reverse Bias Safe Operating Area
20
10
5
Co lle cto r C u r re nt I
C
( A )
M ax im u m P o we r Di s s i p a t i o n P
C
( W )
30
Pc 鈥?T a Derating
s
m
s
W
ith
20
In
fin
1
0.5
1
0 .5
ite
he
at
si
nk
0.1
0.05
Without Heatsink
Natural Cooling
0 .1
0.05
Without Heatsink
Natural Cooling
L=3mH
I
B2
=鈥?.5A
Duty:less than 1%
10
W i t h o u t H e a ts i n k
2
0.01
2
5
10
50
10 0
500
0.01
2
5
10
50
1 00
5 00
C o ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
0
0
25
50
75
100
1 25
150
C oll e ct or - Em it t er Vo l t ag e V
C E
(V )
Am b i e n t T e m pe r a t u r e T a( 藲 C)
88
SANKEN
1
