Power Transistors
2SC4111
Silicon NPN triple diffusion planar type
For horizontal deflection output
20.0鹵0.5
Unit: mm
蠁
3.3鹵0.2
5.0鹵0.3
3.0
6.0
s
Features
q
q
q
q
High-speed switching
High collector to base voltage V
CBO
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio h
FE
(T
C
=25藲C)
Ratings
1500
1500
700
7
22
10
3.5
150
3.5
150
鈥?5 to +150
Unit
V
V
V
V
A
A
A
W
藲C
藲C
26.0鹵0.5
10.0
1.5
2.0
4.0
1.5
20.0鹵0.5
2.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
2.0鹵0.3
3.0鹵0.3
1.0鹵0.2
2.7鹵0.3
0.6鹵0.2
5.45鹵0.3
10.9鹵0.5
1
2
3
1:Base
2:Collector
3:Emitter
TOP鈥?L Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
(T
C
=25藲C)
Symbol
I
CBO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 750V, I
E
= 0
V
CB
= 1500V, I
E
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 7A
I
C
= 7A, I
B
= 2.5A
I
C
= 7A, I
B
= 2.5A
V
CE
= 10V, I
C
= 1A, f = 0.5MHz
I
C
= 6A, L
leak
= 5碌H,
I
B1
= 1.7A, I
B2
= 鈥?.7A
2
12
0.6
7
5
3
8
5
1.5
V
V
MHz
碌s
碌s
min
typ
max
10
1
Unit
碌A(chǔ)
mA
V
2.0
1.5
3.0
1
1
2
3
