Power Transistors
2SC4096
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
20.0鹵0.5
Unit: mm
蠁
3.3鹵0.2
5.0鹵0.3
3.0
6.0
s
Features
q
q
q
q
High-speed switching
High collector to base voltage V
CBO
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio h
FE
26.0鹵0.5
10.0
1.5
2.0
4.0
1.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
20.0鹵0.5
2.5
2.0鹵0.3
3.0鹵0.3
1.0鹵0.2
(T
C
=25藲C)
Ratings
1400
800
7
15
10
5
150
3.5
150
鈥?5 to +150
Unit
V
V
V
A
A
A
W
藲C
藲C
2.7鹵0.3
0.6鹵0.2
5.45鹵0.3
10.9鹵0.5
1
2
3
1:Base
2:Collector
3:Emitter
TOP鈥?L Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 1400V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 5V, I
C
= 5A
I
C
= 5A, I
B
= 1A
I
C
= 5A, I
B
= 1A
V
CE
= 5V, I
C
= 1A, f = 1MHz
I
C
= 5A, I
B1
= 1A, I
B2
= 鈥?A,
V
CC
= 250V
13
1.0
3.5
0.3
800
5
15
5
1.5
V
V
MHz
碌s
碌s
碌s
min
typ
max
100
100
Unit
碌A(chǔ)
碌A(chǔ)
V
2.0
1.5
3.0
1
1
2
3
