DATA SHEET
DATA SHEET
SILICON TRANSISTOR
2SC4093
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DESCRIPTION
The 2SC4093 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteritics, and is
contatined in a 4 pins mini-mold package which enables high-isolation
gain.
2.9鹵0.2
(1.8)
0.85 0.95
PACKAGE DIMENSIONS
(Units: mm)
0.4
鈭?.05
0.4
鈭?.05
0.16
5擄
+0.1
鈭?.06
2.8
鈭?.3
+0.2
1.5
鈭?.1
2
3
4
5擄
0 to 0.1
+0.2
+0.1
+0.1
FEATURES
鈥?Low Noise
NF = 1.1 dB TYP. @ V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
鈥?High Power Gains
1
0.6
鈭?.05
S
21e
2
= 13 dB TYP. @ V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
ORDERING INFORMATION
PART
NUMBER
2SC4093-T1
QUANTITY
3 Kpcs/Reel.
PACKING STYLE
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to perforation side
of the tape.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face to perforation
side of the tape.
1.1
鈭?.1
0.8
+0.2
5擄
5擄
2SC4093-T2
3 Kpcs/Reel.
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
* Please contact with responsible NEC person, if you require evaluation
sample.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4093)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
12
3.0
100
200
150
V
V
V
mA
mW
65 to +150
C
C
Document No. P10365EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
漏
0.4
鈭?.05
+0.1
+0.1
(1.9)
1991