Power Transistors
2SC3946
Silicon NPN triple diffusion planar type
For color TV horizontal deflection driver
0.7鹵0.1
10.0鹵0.2
5.5鹵0.2
2.7鹵0.2
4.2鹵0.2
Unit: mm
4.2鹵0.2
s
Features
q
q
q
High collector to emitter V
CEO
Large collector power dissipation P
C
Full-pack package which can be installed to the heat sink with
one screw
7.5鹵0.2
16.7鹵0.3
蠁3.1鹵0.1
4.0
1.4鹵0.1
1.3鹵0.2
(T
C
=25藲C)
Ratings
350
300
7.5
400
200
15
2.0
150
鈥?5 to +150
Unit
V
V
V
mA
mA
W
藲C
藲C
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
14.0鹵0.5
0.5
+0.2
鈥?.1
0.8鹵0.1
2.54鹵0.25
5.08鹵0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO鈥?20 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
CER
V
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 200V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 100碌A(chǔ), I
E
= 0
I
C
= 5mA, I
B
= 0
I
C
= 100碌A(chǔ), I
B
= 0, R
BE
= 1k鈩?/div>
I
E
= 100碌A(chǔ), I
C
= 0
V
CB
= 10V, I
C
= 10mA
I
C
= 50mA, I
B
= 5mA
V
CE
= 30V, I
C
= 10mA, f = 1MHz
V
CB
= 50V, I
E
= 0, f = 1MHz
50
5
350
300
350
7.5
40
250
1
V
MHz
pF
min
typ
max
2
2
Unit
碌A(chǔ)
碌A(chǔ)
V
V
V
V
1
1
2
