Power Transistors
2SC3944, 2SC3944A
Silicon NPN epitaxial planar type
For low-frequency driver and high power amplification
Complementary to 2SA1535 and 2SA1535A
Unit: mm
0.7鹵0.1
10.0鹵0.2
5.5鹵0.2
2.7鹵0.2
4.2鹵0.2
蠁3.1鹵0.1
1.4鹵0.1
1.3鹵0.2
0.5
+0.2
鈥?.1
0.8鹵0.1
2.54鹵0.25
5.08鹵0.5
1
2
3
4.2鹵0.2
s
Features
q
7.5鹵0.2
Solder Dip
4.0
14.0鹵0.5
q
q
q
Satisfactory foward current transfer ratio h
FE
vs. collector cur-
rent I
C
characteristics
High transition frequency f
T
Makes up a complementary pair with 2SA1535 and 2SA1535A,
which is optimum for the driver-stage of a 60 to 100W output
amplifier
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25藲C)
Ratings
150
180
150
180
5
1.5
1
15
2.0
150
鈥?5 to +150
Unit
V
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SC3944
2SC3944A
2SC3944
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
emitter voltage 2SC3944A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
V
A
A
W
藲C
藲C
16.7鹵0.3
1:Base
2:Collector
3:Emitter
TO鈥?20 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector to base
voltage
2SC3944
2SC3944A
2SC3944
2SC3944A
(T
C
=25藲C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 150V, I
E
= 0
V
CB
= 180V, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 150mA
V
CE
= 5V, I
C
= 500mA
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 10MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
150
180
5
95
50
160
100
0.5
1
200
30
50
2
2
V
V
MHz
pF
220
min
typ
max
10
10
Unit
碌A(chǔ)
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
FE1
Rank classification
Q
95 to 155
R
130 to 220
Rank
h
FE1
1
1
2
