Transistor
2SC3940, 2SC3940A
Silicon NPN epitaxial planer type
For low-frequency output amplification and driver amplification
Complementary to 2SA1534 and 2SA1534A
5.0鹵0.2
4.0鹵0.2
Unit: mm
s
Features
q
0.7鹵0.2
q
Low collector to emitter saturation voltage V
CE(sat)
.
Allowing supply with the radial taping.
Parameter
Collector to
base voltage
Collector to
2SC3940
2SC3940A
2SC3940
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
30
60
25
50
5
1.5
1
1
150
鈥?5 ~ +150
Unit
V
0.45
鈥?.1
+0.15
13.5鹵0.5
s
Absolute Maximum Ratings
(Ta=25藲C)
0.7鹵0.1
8.0鹵0.2
0.45
鈥?.1
+0.15
emitter voltage 2SC3940A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
A
A
W
藲C
藲C
1 2 3
2.54鹵0.15
2.3鹵0.2
V
1.27
1.27
1:Emitter
2:Collector
3:Base
TO鈥?2NL Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SC3940
2SC3940A
2SC3940
2SC3940A
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10碌A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10碌A, I
C
= 0
V
CE
= 10V, I
C
= 500mA
*2
V
CE
= 5V, I
B
= 1A
*2
I
C
= 500mA, I
B
= 50mA
*2
I
B
= 500mA, I
a
= 50mA
*2
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
30
60
25
50
5
85
50
0.2
0.85
200
11
*2
min
typ
max
0.1
Unit
碌A
V
V
V
340
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
0.4
1.2
V
V
MHz
20
pF
Pulse measurement
FE1
Rank classification
Q
85 ~ 170
R
120 ~ 240
S
170 ~ 340
Rank
h
FE1
1
1
2
3
