Transistor
2SC3934
Silicon NPN epitaxial planer type
For high-frequency wide-band low-noise amplification
Unit: mm
2.1鹵0.1
s
Features
q
q
0.425
1.25鹵0.1
0.425
High transition frequency f
T
.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.65
1
2.0鹵0.2
1.3鹵0.1
0.65
3
2
0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
0.9鹵0.1
15
12
2.5
50
30
150
150
鈥?5 ~ +150
V
V
V
mA
mA
mW
藲C
藲C
0.7鹵0.1
Ratings
Unit
0 to 0.1
0.2鹵0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?0
S鈥揗ini Type Package
Marking symbol :
1U
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
(Ta=25藲C)
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
| S
21e
|
2
GUM
NF
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 2V, I
C
= 0
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 10mA, f = 800MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 20mA, f = 800MHz
V
CE
= 10V, I
C
= 20mA, f = 800MHz
V
CE
= 10V, I
C
= 5mA, f = 800MHz
9
12
12
14
1.3
2.5
40
4.5
1.2
GHz
pF
dB
dB
dB
min
typ
max
100
1
Unit
碌A(chǔ)
碌A(chǔ)
0.15
鈥?.05
+0.1
0.3
鈥?
+0.1
1
1
2
3
