Transistor
2SC3931
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
2.1鹵0.1
s
Features
q
q
q
0.425
1.25鹵0.1
0.425
Optimum for RF amplification of FM/AM radios.
High transition frequency f
T
.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.65
1
2.0鹵0.2
1.3鹵0.1
0.65
3
2
0.9鹵0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
3
15
150
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
0.7鹵0.1
0 to 0.1
0.2鹵0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?0
S鈥揗ini Type Package
Marking symbol :
U
s
Electrical Characteristics
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Transition frequency
Common emitter reverse transfer capacitance
Power gain
Noise figure
(Ta=25藲C)
Symbol
V
CBO
V
EBO
h
FE*
V
BE
f
T
C
re
PG
NF
Conditions
I
C
= 10碌A, I
E
= 0
I
E
= 10碌A, I
C
= 0
V
CB
= 6V, I
E
= 鈥?mA
V
CB
= 6V, I
E
= 1mA
V
CB
= 6V, I
E
= 鈥?mA, f = 200MHz
V
CE
= 6V, I
C
= 1mA, f = 10.7MHz
V
CB
= 6V, I
E
= 鈥?mA, f = 100MHz
V
CB
= 6V, I
E
= 鈥?mA, f = 100MHz
450
min
30
3
65
0.72
650
0.8
24
3.3
1
260
V
MHz
pF
dB
dB
typ
max
Unit
V
V
*
h
FE
Rank classification
Rank
h
FE
Marking Symbol
C
65 ~ 160
UC
D
100 ~ 260
UD
0.15
鈥?.05
+0.1
s
Absolute Maximum Ratings
(Ta=25藲C)
0.2
0.3
鈥?
+0.1
1
1
2
3
