Transistor
2SC3929, 2SC3929A
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SA1531 and 2SA1531A
Unit: mm
s
Features
q
q
q
0.65
Low noise voltage NV.
High foward current transfer ratio h
FE
.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
(Ta=25藲C)
Ratings
35
55
35
55
5
100
50
150
150
鈥?5 ~ +150
Unit
V
2.1鹵0.1
0.425
1.25鹵0.1
0.425
0.65
1
2.0鹵0.2
1.3鹵0.1
3
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SC3929
2SC3929A
2SC3929
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
2
0.2
0.9鹵0.1
emitter voltage 2SC3929A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
0 to 0.1
V
V
mA
mA
mW
藲C
藲C
0.7鹵0.1
0.2鹵0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?0
S鈥揗ini Type Package
Marking symbol :
S
(2SC3929)
T
(2SC3929A)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SC3929
2SC3929A
2SC3929
2SC3929A
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
V
BE
NV
f
T
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 5V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CE
= 1V, I
C
= 100mA
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k鈩? Function = FLAT
V
CB
= 5V, I
E
= 鈥?mA, f = 200MHz
80
0.7
35
55
35
55
5
180
700
0.6
1
150
V
V
mV
MHz
min
typ
max
100
1
Unit
nA
碌A(chǔ)
V
0.15
鈥?.05
+0.1
0.3
鈥?
+0.1
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Noise voltage
Transition frequency
*1
h
FE1
Rank classification
Rank
h
FE
R
180 ~ 360
SR
TR
S
260 ~ 520
SS
TS
T
360 ~ 700
ST
TT
Marking
Symbol
2SC3929
2SC3929A
1
1
2
3
