2SC3890
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3890
500
400
10
7(
Pulse
14)
2
30(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Switching Regulator and General Purpose
External Dimensions
FM20(TO220F)
4.0
鹵0.2
10.1
鹵0.2
4.2
鹵0.2
2.8 c0.5
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=0.6A
I
C
=3A, I
B
=0.6A
V
CE
=12V, I
E
=鈥?.5A
V
CB
=10V, f=1MHz
100
max
100
max
400
min
10 to 30
0.5
max
1.3
max
10
typ
50
typ
(Ta=25擄C)
2SC3890
Unit
碌
A
V
V
V
MHz
pF
13.0min
16.9
鹵0.3
8.4
鹵0.2
碌
A
1.35
鹵0.15
1.35
鹵0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
鹵0.2
2.4
鹵0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(鈩?
66
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(A)
0.3
I
B2
(A)
鈥?.6
t
on
(
碌
s)
1
max
t
stg
(
碌
s)
3
max
t
f
(
碌
s)
0.5
max
2.54
3.9
B C E
I
C
鈥?V
C E
Characteristics
(Typical)
7
V
CE
(sat),V
BE
(sat) 鈥?I
C
Temperature Characteristics
(Typical)
C o l l ec t or - Em i t t e r Sa t ur at i on Vo l ta g e V
CE(s at)
(V )
Ba s e- E m i t t er S a t ur a t i o n Vo l ta g e V
BE (sa t)
(V )
( I
C
/I
B
= 5 )
I
C
鈥?V
BE
Temperature Characteristics
(Typical)
7
( V
CE
=4 V )
mA
6
00mA
6
800
6
C o l l e c t o r C u r r e nt I
C
( A )
V
B E
( s a t)
1
鈥?5藲C (Cas
25藲C (Ca
125藲C
I
B
=
40 0m A
Co l l e c t o r Cu r r en t I
C
( A)
30 0m A
4
20 0m A
e Temp)
)
se Temp
4
em
p
)
鹵0.2
0.8
鹵0.2
a
b
酶3.3
鹵0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
)
emp
se T
as
e
2 5
Tem
p)
藲C
eT
(Case
125
藲
25藲C
(C
12
5藲
C
V
C E
( s a t)
0
0 .0 2
0 .0 5
0. 1
0 .5
1
鈥?
5藲
C
0
0
1
2
3
4
5 7
0
0
0 .2
0. 4
0. 6
0.8
鈥?5藲
C (C
2
2
(Ca
C(
100mA
ase T
Cas
emp
)
Temp
)
1 .0
1.2
Col l ec t or - Emi t t e r Vo l tag e V
C E
(V )
Co l l ec to r C ur r en t I
C
( A)
Ba s e - E m i tt o r V ol t ag e V
BE
( V)
(V
C E
= 4 V )
70
D C Cu r r en t G a i n h
FE
50
Sw i t c h i n g T i m e
t
on鈥?/div>
t
stg鈥?/div>
t
f
(
碌
s )
Transient Thermal Resistance
胃
j-a
(藲 C/ W )
h
F E
鈥?I
C
Characteristics
(Typical)
7
5
t
o n
鈥
s t g
鈥
f
鈥?I
C
Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
5
Typ
V
CC
2 0 0 V
I
C
: I
B1
: I
B 2
=1 0: 1: 鈥?2
1
0.5
t
s tg
1
t
on
10
7
0.02
0.05
0.1
0.5
1
5
7
0 .5
0 .3
t
f
0.1
0 .2
0. 5
1
5
7
1
10
T i m e t( m s )
100
1000
Co l l ect o r C urre nt I
C
(A)
C ol l ec t or C ur r en t I
C
( A)
Safe Operating Area
(Single Pulse)
20
10
5
Co llec to r Cu r r e n t I
C
( A)
C olle c tor Cu r re n t I
C
( A )
10
Reverse Bias Safe Operating Area
20
10
30
Pc 鈥?Ta Derating
0
碌
s
5
M ax im u m P o we r D i s s i p a t i o n P
C
( W )
W
ith
20
In
fin
ite
he
at
si
1
Without Heatsink
Natural Cooling
1
Without Heatsink
Natural Cooling
L=3mH
鈥揑
B2
=1A
Duty:less than 1%
nk
0.5
0 .5
10
W i th o u t H e a t s i n k
2
0.1
5
10
50
10 0
500
Coll ec t or - Emi t t e r Vo l t ag e V
C E
( V)
0 .1
5
10
50
1 00
50 0
0
0
25
50
75
10 0
125
150
C o ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
A m b i e n t T em p e r at u r e T a ( 藲 C )
81
SANKEN
1
