2SC3834
Silicon NPN Triple Diffused Planar Transistor
(Switching Transistor)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3834
200
120
8
7(
Pulse
14)
3
50(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Humidifier, DC-DC Converter, and General Purpose
(Ta=25擄C)
2SC3834
100
max
100
max
120
min
70 to 220
0.5
max
1.2
max
30
typ
110
typ
V
MHz
pF
2.5
B C E
12.0min
4.0max
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=200V
V
EB
=8V
I
C
=50mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=0.3A
I
C
=3A, I
B
=0.3A
V
CE
=12V, I
E
=鈥?.5A
V
CB
=10V, f=1MHz
External Dimensions
MT-25(TO220)
3.0
鹵0.2
10.2
鹵0.2
4.8
鹵0.2
2.0
鹵0.1
Unit
碌
A
碌
A
V
16.0
鹵0.7
8.8
鹵0.2
a
b
酶3.75
鹵0.2
V
1.35
0.65
+0.2
-0.1
2.5
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
50
R
L
(鈩?
16.7
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(A)
0.3
I
B2
(A)
鈥?.6
t
on
(
碌
s)
0.5
max
t
stg
(
碌
s)
3.0
max
t
f
(
碌
s)
0.5
max
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I
C
鈥?V
CE
Characteristics
(Typical)
C ol l e c t o r - E m i t te r S at u r a t i o n Vo l t a g e V
CE(s at)
( V )
7
200
mA
V
C E
(sat ) 鈥?I
B
Characteristics
(Typical)
2.6
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
7
( V
CE
= 4 V )
150
mA
A
6
m
100
6
C o l l ec to r C u r r e n t I
C
( A)
2
C o l l ec t or C u r r e n t I
C
( A )
5
60mA
40m
A
5
4
4
p)
em
mp)
(Cas
e Te
eT
3
1
(Ca
s
20 m A
3
1
1
0
0.005 0.01
0
0
1
2
3
4
0.05
0.1
0.5
1
0
0
鈥?0藲C
I
B
=10mA
25藲C
125
2
2
(Case
藲C
Temp
5A
)
3A
I
C
= 1
A
0.5
B as e- Em i t t or V o l t a g e V
BE
( V )
1.0 1.1
Co l l ec t or - Emi t t er Vo l ta ge V
C E
(V )
Ba s e Cu r r en t I
B
( A)
( V
CE
= 4 V )
200
DC C ur r e nt Ga i n h
FE
DC C ur r e nt Ga i n h
FE
300
1 2 5 藲C
( V
C E
= 4V)
Transient Thermal Resistance
胃
j- a
( 藲 C / W )
h
FE
鈥?I
C
Characteristics
(Typical)
h
F E
鈥?I
C
Temperature Characteristics
(Typical)
胃
j- a
鈥?t Characteristics
4
Typ
100
100
25藲
C
鈥?0
50
藲C
1
50
0.5
20
0.02
0.1
0 .5
1
5
7
20
0.01
0.05
0.1
0.5
1
5 7
0.3
1
10
Time t(ms)
100
1000
Co l l ect o r Curre nt I
C
(A )
C ol l ec t or C ur r en t I
C
( A)
f
T
鈥?I
E
Characteristics
(Typical)
(V
C E
= 1 2 V )
30
20
10
C ut- off F re que n c y f
T
( M H
Z
)
5
Co llec to r Cu r r e n t I
C
( A )
20
Safe Operating Area
(Single Pulse)
10
P c 鈥?Ta Derating
50
0m
s
M a xi mu m P o we r D i s s i p a t i o n P
C
( W )
40
W
ith
10
ms
In
fin
30
ite
he
1
0 .5
Without Heatsink
Natural Cooling
at
si
nk
20
10
10
W i t ho u t He a t s i n k
0
25
50
75
10 0
125
15 0
0 .1
0
鈥?.01
0.05
鈥?.05 鈥? . 1
鈥?0. 5
鈥?
鈥?
5
10
50
12 0
2 00
Em i t t er Cu rre nt I
E
(A )
Co ll e ct o r - Em i t t er Vo lt a ge V
C E
( V)
2
0
A m b i e n t T e m p e r a tu r e T a ( 藲 C )
74
SANKEN
1
