2SC3833
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switching Transistor)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3833
500
400
10
12(
Pulse
24)
4
100(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Switching Regulator and General Purpose
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=7A
I
C
=7A, I
B
=1.4A
I
C
=7A, I
B
=1.4A
V
CE
=12V, I
E
=鈥?A
V
CB
=10V, f=1MHz
(Ta=25擄C)
2SC3833
100
max
100
max
400
min
10 to 30
0.5
max
1.3
max
10
typ
105
typ
V
MHz
pF
V
Unit
External Dimensions
MT-100(TO3P)
5.0
鹵0.2
15.6
鹵0.4
9.6
2.0
1.8
4.8
鹵0.2
2.0
鹵0.1
碌
A
碌
A
V
19.9
鹵0.3
4.0
a
b
酶3.2
鹵0.1
20.0min
4.0max
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(鈩?
28.5
I
C
(A)
7
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(A)
0.7
I
B2
(A)
鈥?.4
t
on
(
碌
s)
1.0
max
t
stg
(
碌
s)
3.0
max
t
f
(
碌
s)
0.5
max
5.45
鹵0.1
B
C
E
5.45
鹵0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
鈥?V
CE
Characteristics
(Typical)
12
V
CE
(sat),V
BE
(sat) 鈥?I
C
Temperature Characteristics
(Typical)
C o l l ec t or - Em i t t er S a t ur at i on Vo l ta g e V
CE(s at)
(V )
Ba s e- E m i t t er S a tu r a t i o n Vo l t a g e V
BE( sa t)
(V )
( I
C
/ I
B
= 5 )
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
12
( V
CE
=4 V )
1000m
10
Co l l e c t o r Cu r r e n t I
C
( A )
A
800mA
60 0m A
10
1
鈥?5藲C (Case
Temp)
Co l l e c t o r Cu r r en t I
C
( A )
V
B E
( s at )
8
400 mA
8
p)
Tem
6
25藲C (Ca
(C
125藲C
se Temp
)
as
e
2 5
Temp
)
藲C
(Cas
4
4
C(
Ca
200mA
125
藲
I
B
=100mA
2
12
5藲
V
C E
( s at )
0
0 .0 2
0 . 0 5 0 .1
0. 5
1
5
鈥?
5藲
C
2
0
0
1
2
3
4
10
0
0
0. 2
0.4
0.6
0. 8
鈥?5藲C
C
25藲C
(C
1.0
(Case
Temp
e Te
se
emp)
ase T
mp)
6
)
1.2
Col l e ct or - Em it t e r V ol ta ge V
C E
(V )
Co l le c to r Cu r r en t I
C
( A)
Ba s e - E m i tt o r V ol t ag e V
BE
( V)
(V
C E
= 4 V )
50
S wi t c hi n g T i m e
t
on鈥?/div>
t
s tg鈥?/div>
t
f
(
碌
s )
125藲C
Transient Thermal Resistance
胃
j- a
( 藲 C /W )
h
F E
鈥?I
C
Characteristics
(Typical)
8
5
t
o n
鈥
s t g
鈥
f
鈥?I
C
Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
2
DC C u r r e nt Ga i n h
FE
t
s tg
V
CC
2 0 0 V
I
C
: I
B1
:鈥?I
B 2
= 1 0: 1 :2
1
0.5
t
on
25藲C
鈥?0藲C
1
0. 5
10
t
f
0.1
0.5
1
Co l l ec to r C ur r en t I
C
( A )
5
10
5
0.02
0.05
0.1
0.5
1
5
10 12
0. 1
1
10
T i m e t( m s )
1 00
10 0 0
C ol l ec t or C u rre nt I
C
(A )
Safe Operating Area
(Single Pulse)
30
10
Reverse Bias Safe Operating Area
30
1 00
Pc 鈥?Ta Derating
0
碌
s
5
C oll ec tor Cu rr e n t I
C
( A )
5
C olle c tor Cu rr e n t I
C
( A )
M ax im um P o wer D i s s i p a t i o n P
C
( W )
10
10
10
1ms
DC
c=
(T
25
ms
W
ith
In
fin
1
0.5
ite
C
)
1
0.5
he
50
at
si
nk
0.1
0.05
Without Heatsink
Natural Cooling
0.1
0 .0 5
Without Heatsink
Natural Cooling
L=3mH
鈥揑
B2
=1A
Duty:less than 1%
0.01
5
10
50
10 0
500
Co l l ec t or - Emi t te r V ol ta ge V
C E
(V )
0 .0 1
5
10
50
10 0
5 00
3 .5
0
W i th o u t H e a t s i n k
0
25
50
75
10 0
125
150
Co l l ec to r - Em i tt er Vo l ta g e V
C E
( V)
A m b i e n t T em p er at u r e T a ( 藲 C )
73
SANKEN
1
