2SC3832
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switching Transistor)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3832
500
400
10
7(
Pulse
14)
2
50(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Switching Regulator and General Purpose
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=0.6A
I
C
=3A, I
B
=0.6A
V
CE
=12V, I
E
=鈥?.5A
V
CB
=10V, f=1MHz
100
max
100
max
400
min
10 to 30
0.5
max
1.3
max
10
typ
50
typ
(Ta=25擄C)
2SC3832
Unit
External Dimensions
MT-25(TO220)
3.0
鹵0.2
10.2
鹵0.2
4.8
鹵0.2
2.0
鹵0.1
碌
A
碌
A
V
V
MHz
pF
2.5
12.0min
4.0max
16.0
鹵0.7
8.8
鹵0.2
a
b
酶3.75
鹵0.2
V
1.35
0.65
+0.2
-0.1
2.5
B C E
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(鈩?
66.7
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(A)
0.3
I
B2
(A)
鈥?.6
t
on
(
碌
s)
1
max
t
stg
(
碌
s)
3
max
t
f
(
碌
s)
0.5
max
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I
C
鈥?V
CE
Characteristics
(Typical)
7
0m
V
CE
(sat),V
BE
(sat) 鈥?I
C
Temperature Characteristics
(Typical)
C o l l e c t o r - E m i t te r S at u r a t i o n Vo l t a g e V
CE(s a t)
( V )
Ba s e - E m i tt e r S at u r a t i o n V o l t a g e V
BE(sa t)
( V )
( I
C
/ I
B
= 5)
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
7
( V
CE
=4 V )
600mA
80
6
A
400m A
6
C ol l e c t o r C ur r e nt I
C
( A )
V
B E
( sa t )
1
e
鈥?5藲C (Cas
25藲C (Ca
125藲C
C ol l e c t o r C ur r en t I
C
( A)
300m A
Temp)
)
4
200mA
se Temp
4
em
p
eT
Cas
125
藲
)
as
e
2 5
Tem
p)
藲C
25藲C
(C
12
5藲
C
V
C E
( sa t)
0
0.02
0 . 05
0. 1
0 .5
1
鈥?
5藲
C
0
0
1
2
3
4
5 7
0
0
0.2
0 .4
0.6
0.8
鈥?5藲
C (C
2
2
(Ca
C(
I
B
=100m A
se T
(Case
)
Temp
emp
)
ase T
emp
)
1.0
1. 2
Co l le ct o r -Em i t t er V ol tag e V
C E
(V)
Co l le c to r Cu r r en t I
C
( A)
Ba s e - E m i t t or V o l t a ge V
B E
( V )
(V
CE
=4 V)
50
Sw i t c h i n g T i m e
t
on鈥?/div>
t
s tg鈥?/div>
t
f
(
碌
s )
DC Cu r r e n t Ga i n h
FE
125 藲C
Transient Thermal Resistance
胃
j -a
( 藲 C/ W )
h
FE
鈥?I
C
Characteristics
(Typical)
10
5
t
o n
鈥
s t g
鈥?t
f
鈥?I
C
Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
4
t
s tg
V
CC
2 0 0 V
I
C
:I
B 1
: 鈥?I
B 2
=1 0 :1 :2
25藲C
鈥? 0藲 C
1
0.5
t
on
t
f
0.1
0 .2
0. 5
1
5
1
10
0 .5
0 .3
5
0.02
0.05
0. 1
0. 5
1
5
7
1
10
Time t(ms)
10 0
1000
C ol l ec t or C urre nt I
C
( A)
C ol l e ct or C u r r e nt I
C
( A)
Safe Operating Area
(Single Pulse)
20
10
Reverse Bias Safe Operating Area
20
50
Pc 鈥?Ta Derating
M ax im u m P o we r Di s s i p a t i o n P
C
( W )
10
5
Col lec tor Cu rr e n t I
C
(A )
0
碌
s
10
5
Co lle cto r C u r re nt I
C
( A )
40
W
ith
In
fin
30
ite
he
at
si
1
1
Without Heatsink
Natural Cooling
L=3mH
鈥揑
B2
=1A
Duty:less than 1%
nk
20
0.5
Without Heatsink
Natural Cooling
0 .5
10
W i t h o ut H e at s i n k
0
25
50
75
1 00
125
15 0
0.1
5
10
50
10 0
500
Co ll e ct o r- Em i t t er Vo l t ag e V
C E
(V )
0 .1
5
10
50
10 0
500
2
0
Col l ec t or - Em i tt e r Vol t ag e V
C E
( V)
A m b i en t T e m p e r a t ur e T a ( 藲 C )
72
SANKEN
1
