2SC3831
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switching Transistor)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3831
600
500
10
10(
Pulse
20)
4
100(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Switching Regulator and General Purpose
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=600V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=1A
I
C
=5A, I
B
=1A
V
CE
=12V, I
E
=鈥?A
V
CB
=10V, f=1MHz
1
max
100
max
500
min
10 to 30
0.5
max
1 . 3
max
8
typ
105
typ
(Ta=25擄C)
2SC3831
Unit
External Dimensions
MT-100(TO3P)
5.0
鹵0.2
15.6
鹵0.4
9.6
2.0
1.8
4.8
鹵0.2
2.0
鹵0.1
mA
碌
A
4.0
V
V
MHz
pF
19.9
鹵0.3
a
b
酶3.2
鹵0.1
20.0min
4.0max
V
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(鈩?
40
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(A)
0.5
I
B2
(A)
鈥?.0
t
on
(
碌
s)
1
max
t
stg
(
碌
s)
4.5
max
t
f
(
碌
s)
0.5
max
5.45
鹵0.1
B
C
E
5.45
鹵0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
鈥?V
C E
Characteristics
(Typical)
10
.2
1A
V
CE
(sat),V
BE
(sat) 鈥?I
C
Temperature Characteristics
(Typical)
( I
C
/ I
B
= 5)
Co l l e c t o r - Em i t t e r Sa t u r a t i o n V o l t a ge V
CE(s at)
( V )
B a s e - Em i t t e r Sa t u r a ti o n V ol t ag e V
B E(sa t)
(V )
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
10
( V
CE
= 4V )
A
=1
800 mA
V
B E
( s at )
1
鈥?
mp)
5藲C (Case Te
e Temp
)
C ol l e c t o r C ur r en t I
C
( A)
6
400 mA
as
25藲C (C
C ol l e c t o r C ur r e nt I
C
( A )
8
I
B
60 0m A
8
6
p)
Tem
Te
(Ca
se
4
mp
200mA
4
藲C
(Cas
25藲C
(C
a
125
藲C
100mA
2
12
C
5藲
25
2
V
C E
( s a t)
0
0.02
0.05 0. 1
0.5
1
鈥?
C
5藲
0
0
1
2
3
4
5
10
0
0
0.2
0.4
0.6
0. 8
鈥?5藲C
(Case
se
Temp
125藲C
(Case
e Te
mp)
)
)
Temp
)
1.0
1.2
Col l e ct o r- Em i t t er Vo l ta ge V
C E
(V )
C ol l e ct or C u r r e nt I
C
( A)
Ba s e - E m i tt o r Vo l ta g e V
B E
( V)
(V
C E
= 4 V )
50
125藲C
Transient Thermal Resistance
胃
j-a
(藲 C/ W )
h
F E
鈥?I
C
Characteristics
(Typical)
10
Sw i t c hi n g T i m e
t
on鈥?/div>
t
stg鈥?/div>
t
f
(
碌
s )
5
t
o n
鈥
s tg
鈥
f
鈥?I
C
Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
2
DC Cu r r e n t Ga i n h
FE
25藲 C
鈥? 5藲 C
t
s tg
V
CC
2 0 0 V
I
C
: I
B1
:I
B2
=1 0: 1 :鈥?2
1
1
0.5
t
on
0. 5
10
t
f
0.1
0 .2
0. 5
1
Co l le c to r C ur r en t I
C
( A)
5
10
5
0.02
0.05
0.1
0. 5
1
5
10
0. 1
1
10
T i m e t( m s )
1 00
1000
Co l le ct o r Curre nt I
C
( A)
Safe Operating Area
(Single Pulse)
30
1m
10
10
0
碌
s
Reverse Bias Safe Operating Area
30
10 0
Pc 鈥?Ta Derating
5
Col lec tor Cu rr e n t I
C
(A )
D
C
5
Co llec to r Cu r r en t I
C
( A)
M ax im u m P o we r Di s s i p a t i o n P
C
( W )
10
s
10
W
ms
ith
In
fin
ite
1
0.5
1
0.5
Without Heatsink
Natural Cooling
L=3mH
I
B 2
= 鈥?0 .5 A
Duty:less than 1%
he
50
at
si
nk
0.1
0.05
Without Heatsink
Natural Cooling
1
0.05
0.01
50
0.02
8 10
50
1 00
500 600
10 0
C ol l ec t or - Em i tt e r Vol t ag e V
C E
( V)
5 00 6 00
3. 5
0
W i t h ou t H e at s i n k
0
25
50
75
100
1 25
150
Co l l ect o r - Em i t te r V ol ta ge V
C E
(V)
Am b i e n t T e m pe r a t u r e T a( 藲 C)
71
SANKEN
1
