2SC3830
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switching Transistor)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3830
600
500
10
6(
Pulse
12)
2
50(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Switching Regulator and General Purpose
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=600V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=2A
I
C
=2A, I
B
=0.4A
I
C
=2A, I
B
=0.4A
V
CE
=12V, I
E
=鈥?.5A
V
CB
=10V, f=1MHz
1
max
100
max
500
min
10 to 30
0.5
max
1.3
max
8
typ
45
typ
(Ta=25擄C)
2SC3830
Unit
mA
External Dimensions
MT-25(TO220)
3.0
鹵0.2
10.2
鹵0.2
4.8
鹵0.2
2.0
鹵0.1
碌
A
16.0
鹵0.7
V
V
MHz
pF
8.8
鹵0.2
a
b
酶3.75
鹵0.2
12.0min
4.0max
V
1.35
0.65
+0.2
-0.1
2.5
B C E
2.5
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(鈩?
100
I
C
(A)
2
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(A)
0.2
I
B2
(A)
鈥?.4
t
on
(
碌
s)
1
max
t
stg
(
碌
s)
4.5
max
t
f
(
碌
s)
0.5
max
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I
C
鈥?V
CE
Characteristics
(Typical)
6
1A
800mA
V
CE
(sat),V
BE
(sat) 鈥?I
C
Temperature Characteristics
(Typical)
C o l l e c t or - Em i t t e r Sa t u r at i on V ol t ag e V
CE(sa t)
(V )
B as e- Em i t t e r S a t ur at i on Vo l ta g e V
B E(sa t)
(V )
( I
C
/ I
B
= 5 )
2
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
6
( V
CE
= 4V )
5
C ol l e c t o r C ur r en t I
C
( A)
60 0m A
5
C ol l e c t o r C ur r e nt I
C
( A )
4
400 mA
4
300mA
3
V
B E
( sa t )
1
mp)
鈥?5藲C (Case Te
Temp)
25藲C (Case
p)
ase Tem
125藲C (C
12
5藲
3
se
Te
mp
)
(Ca
se T
emp
鈥?5藲
)
C (C
ase
Tem
p)
200mA
2
I
B
=100mA
(C
as
2 5
e
Te
m
p)
藲C
2
V
C E
( s at )
0
0.02
0 . 05
0 .1
0.5
1
鈥?/div>
藲
55
C
0
0
1
2
3
4
5
0
0
0.2
0.4
0. 6
25藲C
125
1
C
1
藲C
(Ca
0 .8
1.0
1. 2
1 .4
Co l l ec t or - Emi t te r V ol ta ge V
C E
( V)
C o ll e ct o r C u r r e nt I
C
( A)
B as e- Em i t t or V o l t a g e V
BE
( V )
(V
C E
= 4 V )
50
DC Cu r r e n t Ga i n h
FE
Sw i t c hi n g T i m e
t
on鈥?/div>
t
stg鈥?/div>
t
f
(
碌
s )
7
5
V
CC
2 0 0 V
I
C
: I
B 1
:I
B2
= 1 0: 1: 鈥?2
1
0.5
t
s tg
Transient Thermal Resistance
胃
j-a
(藲 C/ W )
h
F E
鈥?I
C
Characteristics
(Typical)
t
o n
鈥
s tg
鈥?t
f
鈥?I
C
Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
4
125藲C
25藲C
鈥?5 藲C
1
10
t
on
0.5
0.3
t
f
0.1
0 .2
0. 5
1
5
6
5
0.02
0.05
0.1
0 .5
1
5 6
1
10
Time t(ms)
10 0
1000
C ol l e ct or C urre nt I
C
(A)
C o ll e ct o r Cu r r e nt I
C
( A)
Safe Operating Area
(Single Pulse)
20
10
5
10
Reverse Bias Safe Operating Area
20
50
Pc 鈥?Ta Derating
10
0
碌
s
10
5
Co lle cto r C u r re nt I
C
( A )
M ax im u m P o we r Di s s i p a t i o n P
C
( W )
40
W
ith
1m
s
Col lec tor Cu rr e n t I
C
(A )
ms
In
D
C
fin
1
0.5
1
0.5
Without Heatsink
Natural Cooling
L=3mH
I
B2
=鈥?.5A
Duty:less than 1%
30
ite
he
at
si
nk
20
0.1
0.05
0.02
7
Without Heatsink
Natural Cooling
0.1
0.05
0.02
50
10
W i t h ou t H ea t s i n k
0
25
50
75
100
12 5
1 50
10
50
1 00
500 600
10 0
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
500 600
2
0
Co ll e ct o r -Em i t t er Vo l tag e V
C E
( V)
A m bi e nt T e m p e r a t ur e T a ( 藲 C )
70
SANKEN
1
