Transistor
2SC3829
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
Unit: mm
2.8
鈥?.3
+0.2
s
Features
q
q
q
q
0.65鹵0.15
1.5
鈥?.05
+0.25
0.65鹵0.15
Low noise figure NF.
High gain.
High transition frequency f
T
.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.95
2.9
鈥?.05
1
1.9鹵0.2
+0.2
0.95
3
0.4
鈥?.05
+0.1
2
1.45
1.1
鈥?.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
10
2
80
200
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
JEDEC:TO鈥?36
EIAJ:SC鈥?9
Mini Type Package
Marking symbol :
3M
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
(Ta=25藲C)
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
h
FE
f
T
C
ob
| S
21e
NF
|
2
GUM
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 2V, I
C
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 100碌A(chǔ), I
B
= 0
V
CE
= 8V, I
C
= 20mA
V
CE
= 8V, I
C
= 20mA, f = 800MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 8V, I
C
= 20mA, f = 800MHz
V
CE
= 8V, I
C
= 20mA, f = 800MHz
V
CE
= 8V, I
C
= 20mA, f = 800MHz
10
15
10
50
5
150
6
0.7
13.5
15
2
1.2
300
GHz
pF
dB
dB
dB
min
typ
max
1
1
Unit
碌A(chǔ)
碌A(chǔ)
V
V
0 to 0.1
s
Absolute Maximum Ratings
(Ta=25藲C)
0.1 to 0.3
0.4鹵0.2
0.8
0.16
鈥?.06
+0.2
+0.1
1
1
2
