2SC3679
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switching Transistor)
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3679
900
800
7
5(
Pulse
10)
2.5
100(Tc=25擄C)
150
鈥?5 to +150
(Ta=25擄C)
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Switching Regulator and General Purpose
(Ta=25擄C)
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=2A
I
C
=2A, I
B
=0.4A
I
C
=2A, I
B
=0.4A
V
CE
=12V, I
E
=鈥?.5A
V
CB
=10V, f=1MHz
100
max
100
max
800
min
10 to 30
0.5
max
1.2
max
6
typ
75
typ
External Dimensions
MT-100(TO3P)
5.0
鹵0.2
15.6
鹵0.4
9.6
2.0
1.8
4.8
鹵0.2
2.0
鹵0.1
2SC3679
Unit
碌
A
碌
A
V
V
MHz
pF
20.0min
19.9
鹵0.3
4.0
a
b
酶3.2
鹵0.1
4.0max
V
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(鈩?
125
I
C
(A)
2
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(A)
0.3
I
B2
(A)
鈥?
t
on
(
碌
s)
1
max
t
stg
(
碌
s)
5
max
t
f
(
碌
s)
1
max
5.45
鹵0.1
B
C
E
5.45
鹵0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
鈥?V
C E
Characteristics
(Typical)
5
V
CE
(sat),V
BE
(sat) 鈥?I
C
Temperature Characteristics
(Typical)
( I
C
/I
B
= 5 )
C ol l e c t o r - E m i tt e r S at u r a t i o n V o l t a g e V
CE(sa t)
(V )
B as e- Em i t t e r Sa t ur at i on Vo l ta g e V
BE (sa t)
( V )
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
5
( V
CE
= 4 V )
700mA
600mA
500m A
2
C ol l e c t o r C ur r en t I
C
( A)
300mA
3
C ol l e c t o r C ur r e nt I
C
( A )
4
400 mA
4
3
emp
)
emp)
(Case
T
25藲C
200mA
ase
T
I
B
=100mA
Te
m
p)
25藲
C
鈥? 5 藲 C
1
1
V
C E
( sa t )
0
0.03 0.05
0.1
0. 5
125藲C
(
Ca
se
0
0
1
2
3
4
1
5
10
0
0
0. 2
0.4
0.6
0.8
鈥?5藲C (C
鈥?5藲C (Case Temp)
25藲C (Case Temp)
e Temp)
125藲C (Cas
125藲
C (C
2
1
V
B E
( s at )
2
ase Tem
p)
1. 0
1.2
Co l l ect o r - Em i t te r V ol ta ge V
C E
(V)
Co l l ec to r C ur r en t I
C
( A )
B a s e - Em i t t o r Vo l t a g e V
B E
( V)
(V
C E
= 4 V )
50
Sw i t c hi n g T i m e
t
on鈥?/div>
t
stg鈥?/div>
t
f
(
碌
s )
DC Cu r r e n t Ga i n h
FE
10
t
s tg
V
CC
2 5 0 V
I
C
:I
B 1
: 鈥?I
B2
=2 :0 . 3: 1C o ns t.
Transient Thermal Resistance
胃
j -a
( 藲 C/ W )
h
FE
鈥?I
C
Characteristics
(Typical)
t
o n
鈥
s t g
鈥?t
f
鈥?I
C
Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
2
125藲C
25藲C
5
1
鈥?5 藲C
0 .5
1
0 .5
t
on
0 .2
0.1
0.5
t
f
10
5
0.02
0.05
0.1
0. 5
1
5
1
5
0 .1
1
10
T i m e t( m s )
100
10 0 0
C ol l ec t or C urr en t I
C
(A )
C ol l ec t or C ur r e nt I
C
( A)
Safe Operating Area
(Single Pulse)
20
10
5
Co lle cto r Cu r re n t I
C
( A )
10
10
1m
Reverse Bias Safe Operating Area
20
100
Pc 鈥?Ta Derating
s
s
s
5
Co lle cto r C u r re nt I
C
( A )
0m
M ax im u m P o we r Di s s i p a t i o n P
C
( W )
m
10
10
10
0
碌
碌
s
W
s
ith
DC
( Tc
In
fin
1
0.5
1
0 .5
ite
=2
5
C)
he
50
at
si
nk
0.1
0.05
Without Heatsink
Natural Cooling
0 .1
0 .0 5
Without Heatsink
Natural Cooling
L=3mH
I
B2
=鈥?.0A
Duty:less than1%
0.01
5
10
50
1 00
50 0
1000
0 .0 1
50
1 00
50 0
10 0 0
3.5
0
W i t h o u t H e a ts i n k
0
25
50
75
10 0
125
150
C o l l ect o r - Em i t t er V ol ta ge V
C E
(V )
C ol l ec t or - Em i tt e r Vol t ag e V
C E
( V)
A m b i e n t T em p e r a tu r e T a ( 藲 C )
68
SANKEN
1
