2SC3678
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switching Transistor)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3678
900
800
7
3(
Pulse
6)
1.5
80(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Switching Regulator and General Purpose
(Ta=25擄C)
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=1A
I
C
=1A, I
B
=0.2A
I
C
=1A, I
B
=0.2A
V
CE
=12V, I
E
=鈥?.3A
V
CB
=10V, f=1MHz
100
max
100
max
800
min
10 to 30
0.5
max
1.2
max
6
typ
50
typ
External Dimensions
MT-100(TO3P)
5.0
鹵0.2
15.6
鹵0.4
9.6
2.0
1.8
4.8
鹵0.2
2.0
鹵0.1
2SC3678
Unit
碌
A
碌
A
19.9
鹵0.3
V
V
V
MHz
pF
4.0
a
b
酶3.2
鹵0.1
20.0min
4.0max
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(鈩?
250
I
C
(A)
1
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(A)
0.15
I
B2
(A)
鈥?.5
t
on
(
碌
s)
1
max
t
stg
(
碌
s)
5
max
t
f
(
碌
s)
1
max
5.45
鹵0.1
B
C
E
5.45
鹵0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
鈥?V
CE
Characteristics
(Typical)
3
V
CE
(sat),V
BE
(sat) 鈥?I
C
Temperature Characteristics
(Typical)
( I
C
/I
B
= 5)
C o l l e c to r - E m i t t er S a tu r a t i o n Vo l t a g e V
C E( sa t)
( V )
B a s e - Em i t t e r Sa t u r a ti o n V o l t a ge V
BE (sat)
( V)
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
3
( V
CE
=4 V )
500mA
400mA
300m A
1
鈥?5藲C (Case Te
25藲C (Cas
V
BE
( s at )
mp)
C o l l e c t o r C u r r e n t I
C
( A)
2
200 mA
Co l l e c t o r Cu r r e n t I
C
( A )
e Temp)
Temp)
2
p)
Tem
p)
ase Te
m
25藲C (C
2 5
Cas
eT
藲C
e
m
p)
鈥?5
藲C
(
V
C E
( s at )
0
0 .0 2
0 . 05
0.1
0 .5
1
12
5藲C
0
0
1
2
3
4
3
0
0
0.2
0.4
0.6
0 .8
鈥?5藲C (C
1
125藲
I
B
=50mA
1
C (C
ase
125藲C
ase Tem
100mA
(Case
p)
1.0
1. 2
C ol l ec t or - Emi t t er Vo l ta ge V
C E
(V)
C o ll e ct o r C u r r e nt I
C
( A)
B as e - Em i t t o r Vo l t a g e V
BE
( V )
(V
C E
=4 V)
50
12 5藲 C
D C C u r r e n t Gai n h
F E
2 5藲 C
S wi t c hi n g T i m e
t
on鈥?/div>
t
s tg鈥?/div>
t
f
(
碌
s )
8
5
t
s tg
V
CC
2 5 0 V
I
C
: I
B1
: 鈥?I
B2
= 2 : 0. 3: 1C o ns t .
1
0 .5
t
on
0 .2
0.1
0 .5
1
3
Transient Thermal Resistance
胃
j -a
( 藲 C/ W )
h
F E
鈥?I
C
Characteristics
(Typical)
t
o n
鈥
s t g
鈥
f
鈥?I
C
Characteristics
(Typical)
胃
j- a
鈥?t Characteristics
3
鈥?55 藲 C
1
t
f
10
0.5
5
0.01
0. 0 5
0. 1
0 .5
1
3
0.3
1
5
10
50
Time t(ms)
100
5 0 0 1 00 0
Co l l ect o r Curr en t I
C
(A )
C o ll e ct o r C u r r e nt I
C
( A)
Safe Operating Area
(Single Pulse)
10
10
Reverse Bias Safe Operating Area
80
P c 鈥?Ta Derating
10
0
碌
M ax im um P o wer Dis s i pa t i o n P
C
( W )
5
s
5
60
W
ith
C olle c tor Cur re n t I
C
( A )
Co lle cto r C ur re n t I
C
( A )
In
fin
ite
he
1
1
Without Heatsink
Natural Cooling
L=3mH
I
B2
=鈥?.0A
Duty:less than 1%
40
at
si
nk
0.5
Without Heatsink
Natural Cooling
0.5
20
0.1
50
10 0
5 00
1000
0.1
50
10 0
5 00
1 00 0
3. 5
0
W i t ho u t H ea t s i nk
0
25
50
75
100
125
150
Col l e ct or - Em i tte r V ol ta ge V
C E
(V)
Co l l ec to r - Em i tt er Vo l ta ge V
C E
( V)
Am b i e n t T e m p er a t u r e T a( 藲 C )
67
SANKEN
1
