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2SC3603 Datasheet

  • 2SC3603

  • NEC [NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOI...

  • NEC   NEC

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DATA SHEET
SILICON TRANSISTOR
2SC3603
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3603 is an NPN epitaxial transistor designed for low-
noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and
has a wide dynamic range.
PACKAGE DIMENSIONS (in mm)
E
3.8 MIN.
FEATURES
鈥?/div>
Low noise
: NF = 2.1 dB TYP. @ f = 2.0 GHz
鈥?/div>
High power gain : G
A
= 10 dB TYP. @ f = 2.0 GHz
C
3.8 MIN.
3.8 MIN.
B
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T (T
C
= 25
擄C)
T
j
T
stg
RATING
20
12
3
100
580
200
-65 to +150
UNIT
V
V
V
mA
mW
擄C
擄C
E
PIN CONNECTIONS
E: Emitter
C: Collector
0.5
鹵
0.05
B: Base
2.55
鹵
0.2
蠁
2.1
1.8 MAX.
0.55
3.8 MIN.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
45
擄
ELECTRICAL CHARACTERISTICS (T
A
= 25
擄
C)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Reverse Transfer Capacitance
Noise Figure
Insertion Gain
Maximum Available Gain
Power Gain
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
NF
Note
|S
21e
|
2
MAG
G
A
TEST CONDITIONS
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 10 V, I
C
= 20 mA Pulse
V
CE
= 10 V, I
C
= 20 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 10 V, I
C
= 7 mA, f = 2 GHz
V
CE
= 10 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 10 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 10 V, I
C
= 7 mA, f = 2 GHz
7.0
10.0
50
120
7
0.5
2.1
9.0
12.0
10
1.0
3.4
MIN.
TYP.
MAX.
1.0
1.0
300
GHz
pF
dB
dB
dB
dB
UNIT
0.1
+0.06
-0.03
0.5
鹵
0.05
碌
A
碌
A
Document No. P11674EJ1V0DS00 (1st edition)
Date Published August 1996 P
Printed in Japan
漏
1996

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