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2SC3587 Datasheet

  • 2SC3587

  • NEC [NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOI...

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DATA SHEET
SILICON TRANSISTOR
2SC3587
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3587 is an NPN epitaxial transistor designed for low-
noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and
has a wide dynamic range.
PACKAGE DIMENSIONS (in mm)
E
3.8 MIN.
FEATURES
鈥?/div>
Low noise
: NF = 1.7 dB TYP.
@ f = 2 GHz
C
3.8 MIN.
3.8 MIN.
B
NF = 2.6 dB TYP. @ f = 4 GHz
鈥?/div>
High power gain : G
A
= 12.5 dB TYP. @ f = 2 GHz
G
A
= 8.0 dB TYP.
@ f = 4 GHz
3.8 MIN.
45
擄
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T (T
C
= 25
擄C)
T
j
T
stg
RATING
20
10
1.5
35
580
200
-65 to +150
UNIT
V
V
V
mA
mW
擄C
擄C
PIN CONNECTIONS
E: Emitter
C: Collector
0.5
鹵
0.05
B: Base
2.55
鹵
0.2
E
蠁
2.1
1.8 MAX.
0.55
ELECTRICAL CHARACTERISTICS (T
A
= 25
擄
C)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Reverse Transfer Capacitance
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
NF
Note
TEST CONDITIONS
V
CB
= 10 V
V
EB
= 1 V
V
CE
= 6 V, I
C
= 10 mA Pulse
V
CE
= 6 V, I
C
= 10 mA
V
CB
= 10 V, f = 1 MHz
V
CE
= 6 V, I
C
= 5 mA
f = 2 GHz
f = 4 GHz
Insertion Gain
|S
21e
|
2
V
CE
= 6 V, I
C
= 10 mA
f = 2 GHz
f = 4 GHz
Maximum Available Gain
Power Gain
MAG
G
A
V
CE
= 6 V, I
C
= 10 mA, f = 4 GHz
V
CE
= 6 V, I
C
= 5 mA
f = 2 GHz
f = 4 GHz
10.5
50
100
10.0
0.2
1.7
2.6
12.5
7.5
10
12.5
8.0
0.7
2.4
MIN.
TYP.
MAX.
1.0
1.0
250
GHz
pF
dB
dB
dB
dB
dB
dB
dB
UNIT
0.1
+0.06
-0.03
0.5
鹵
0.05
碌
A
碌
A
Document No. P11673EJ1V0DS00 (1st edition)
Date Published August 1996 P
Printed in Japan
漏
1996

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