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2SC3545-T1B Datasheet

  • 2SC3545-T1B

  • BJT

  • 8頁

  • ETC

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上傳產(chǎn)品規(guī)格書

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NPN SILICON
OSCILLATOR AND MIXER TRANSISTOR
FEATURES
鈥?LOW COST
鈥?/div>
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 2000 MHz TYP
鈥?/div>
LOW COLLECTOR TO BASE TIME CONSTANT:
C
C
鈥
b'b
= 5 ps TYP
鈥?/div>
LOW FEEDBACK CAPACITANCE:
C
RE
= 0.55 pF TYP
NE944
SERIES
DESCRIPTION
The NE944 series of NPN silicon epitaxial bipolar transistors
is intended for use in general purpose UHF oscillator and
mixer applications. It is suitable for automotive keyless entry
and TV tuner designs.
The device features stable oscillation and small frequency
drift during changes in the supply voltage and over the
ambient temperature range.
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE CODE
SYMBOLS
I
CBO
h
FE
V
CE(sat)
f
T
C
OB
C
C
鈥
b'b
C
RE
R
TH (J-C)
R
TH (J-A)
P
T
PARAMETERS AND CONDITIONS
Collector Cutoff Current, V
CB
= 12 V, I
E
= 0
DC Current Gain, V
CE
= 10 V, I
C
= 5.0 mA
Collector Saturation Voltage, I
C
= 10 mA, I
B
= 1.0 mA
Gain Bandwidth Product, V
CE
= 3 V, I
E
= 5 mA
Output Capacitance, V
CB
= 3 V, I
E
= 0 mA, f = 1.0 MHz
Collector to Base Time Constant, V
CE
= 3 V,
I
E
= -5.0 mA, f = 31.9 MHz
Feedback Capacitance, V
CB
= 10 V, I
E
= 0 mA, f = 1.0 MHz
Thermal Resistance, Junction to Case (infinite heat sink)
Thermal Resistance, Junction to Ambient (free air)
Power Dissipation
V
GHz
pF
ps
pF
擄C/W
擄C/W
mW
200
833
150
1.2
2.0
0.7
3.5
1.2
8.0
0.55
5.0
1.0
200
620
150
碌A(chǔ)
40
100
NE94430
2SC4184
30
UNITS MIN
TYP MAX MIN
0.1
200
0.5
1.3
50
100
NE94433
2SC3545
33
TYP MAX
0.1
250
0.5
2.0
Note:
1. Electronic Industrial Association of Japan.
California Eastern Laboratories

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