Transistor
2SC3526(H)
Silicon NPN epitaxial planer type
For display video output
Unit: mm
5.9鹵0.2
4.9鹵0.2
q
q
q
2.54鹵0.15
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
R
EB
(Ta=25藲C)
Ratings
110
100
50
3.5
300
150
1.0
150
鈥?5 ~ +150
Unit
V
V
V
V
mA
mA
W
藲C
藲C
0.45
鈥?.1
1.27
1.27
+0.2
Symbol
V
CBO
V
CER*
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
13.5鹵0.5
0.7
鈥?.2
+0.3
High transition frequency f
T
.
Small collector output capacitance C
ob
.
Wide current range.
0.7鹵0.1
8.6鹵0.2
s
Features
0.45
鈥?.1
+0.2
= 470鈩?/div>
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
(Ta=25藲C)
Symbol
I
CEO
V
CBO
V
CER
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T1
f
T2
C
ob
Conditions
V
CE
= 35V, I
B
= 0
I
C
= 100碌A(chǔ), I
E
= 0
I
C
= 500碌A(chǔ), R
BE
= 470鈩?/div>
I
C
= 1mA, I
B
= 0
I
E
= 100碌A(chǔ), I
C
= 0
V
CE
= 5V, I
C
= 100mA
*
I
C
= 150mA, I
B
= 15mA
*
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 鈥?10mA, f = 200MHz
V
CB
= 30V, I
E
= 0, f = 1MHz
300
350
3
110
100
50
3.5
20
0.5
V
MHz
MHz
pF
min
typ
max
10
Unit
碌A(chǔ)
V
V
V
V
Pulse measurement
3.2
1
2
3
1:Emitter
2:Collector
3:Base
EIAJ:SC鈥?1
TO鈥?2L Package
1
1
2
