2SC3359S
Transistors
Power Transistor (80V, 0.3A)
2SC3359S
Features
1) High breakdown voltage, BV
CEO
=80V
2) Low saturation voltage, typically V
CE(sat)
= 0.2V at I
B
=0.3A / 0.03A
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
80
80
5
0.3
0.3
150
鈭?5
to +150
Unit
V
V
V
A
W
C
C
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Emitter outoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
80
80
5
鈭?/div>
鈭?/div>
鈭?/div>
120
50
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
0.2
鈭?/div>
150
5
Max.
鈭?/div>
鈭?/div>
鈭?/div>
0.5
0.5
0.5
390
鈭?/div>
8
Unit
V
V
V
A
A
Conditions
I
C
=
1mA
I
C
=
50碌A(chǔ)
I
E
=
50碌A(chǔ)
V
CB
=
80V
V
EB
=
4V
V
鈭?/div>
MHz
pF
V
C
/I
CB
=
0.3V/0.03A
V
CE
=
5V , I
E
=
鈭?.01A
, f
=
100MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
V
CE
=
3V, I
C
=
0.1A
Packaging specification and h
FE
Type
Package
h
FE
Code
Basic orderin unit (pieces)
2SC3359S
SPT
QR
TP
5000
Rev.A
1/2
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