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2SC3357(NE85634) Datasheet

  • 2SC3357(NE85634)

  • Discrete

  • 8頁

  • ETC

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DATA SHEET
NPN SILICON RF TRANSISTOR
2SC3357
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN POWER MINIMOLD
FEATURES
鈥?Low noise and high gain
NF = 1.1 dB TYP., G
a
= 7.5 dB TYP. @ V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
NF = 1.8 dB TYP., G
a
= 9.0 dB TYP. @ V
CE
= 10 V, I
C
= 40 mA, f = 1 GHz
鈥?High power gain : MAG = 10 dB TYP. @ I
C
= 40 mA, f = 1 GHz
鈥?Large P
tot
: P
tot
= 1.2 W (Mounted on 16 cm
2
脳
0.7 mm (t) ceramic substrate)
鈥?Small package : 3-pin power minimold package
ORDERING INFORMATION
Part Number
2SC3357
2SC3357-T1
Quantity
25 pcs (Non reel)
1 kpcs/reel
Supplying Form
鈥?12 mm wide embossed taping
鈥?Collector face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25擄C)
擄
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
20
12
3.0
100
1.2
150
鈭?5
to +150
Unit
V
V
V
mA
W
擄C
擄C
T
j
T
stg
2
Note
Mounted on 16 cm
脳
0.7 mm (t) ceramic substrate
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10211EJ01V0DS (1st edition)
(Previous No. P10357EJ4V1DS00)
Date Published January 2003 CP(K)
Printed in Japan
The mark
鈥?/div>
shows major revised points.
漏
NEC Compound Semiconductor Devices 1985, 2003

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